NC - SiC MOSFETs
177 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: LSIC1MO170E0750 TTI: LSIC1MO170E0750 IXYS Availability: 0In StockSiC MOSFETs TO247 1.7KV 4.4A N-CH SIC | 0In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 6.2 A | 1 Ohms | - 5 V, + 20 V | 4 V | 13 nC | - 55 C | + 175 C | 60 W | Enhancement | |||||
Mfr: LSIC1MO120E0080 TTI: LSIC1MO120E0080 IXYS Availability: Not Available OnlineSiC MOSFETs 1200V 80mOhm SiC MOSFET | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 39 A | 80 mOhms | - 5 V, + 20 V | 2.8 V | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | |||||
Mfr: LSIC1MO120E0160 TTI: LSIC1MO120E0160 IXYS Availability: Not Available OnlineSiC MOSFETs 1200 V 160 mOhm SiC Mosfet | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 200 mOhms | - 5 V, + 20 V | 1.8 V | 57 nC | - 55 C | + 150 C | 125 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263CA-7 | N-Channel | 1 Channel | 1.7 kV | 3.9 A | 1.5 Ohms | - 6 V to + 22 V | 4 V | 24 nC | + 175 C | 39 W | Enhancement | |||||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | ||||||
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 1200 V | 18 A | 200 mOhms | - 10 V, + 22 V | 3.1 V | 25 nC | - 55 C | + 175 C | 109 W | Enhancement | ||||||
0In Stock | Vishay | Through Hole | TO-247AD-3L | N-Channel | 1 Channel | 1200 V | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
0In Stock | Vishay | Through Hole | TO-247AD-4L | N-Channel | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 32 A | 100 mOhms | - 10 V, + 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1200 V | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||||
Mfr: SCT2H12NZGC11 TTI: Not Assigned ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC | 0In Stock | ROHM Semiconductor | Through Hole | TO-3PFM-3 | N-Channel | 1 Channel | 1.7 kV | 3.7 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 35 W | Enhancement | SCT2H12NZ | ||||
Mfr: MXPQ120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXP120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 45 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | |||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
Mfr: MXPQ120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXP120A045SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
Mfr: MXP120A045SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
Mfr: MXP120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-3 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 84 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
Mfr: MXPQ120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
0In Stock | IXYS | SMD/SMT | D2PAK-7 (TO-263-7) | N-Channel | 1 Channel | 1.7 kV | 6.4 A | 750 mOhms | - 20 V, + 20 V | 1.8 V | 11 nC | - 55 C | + 175 C | 65 W | Enhancement |
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