NC - SiC MOSFETs
197 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: LSIC1MO170E0750 TTI: LSIC1MO170E0750 IXYS Availability: 0In StockSiC MOSFETs TO247 1.7KV 4.4A N-CH SIC | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.7 kV | 6.2 A | 1 Ohms | - 5 V, + 20 V | 4 V | 13 nC | - 55 C | + 175 C | 60 W | Enhancement | |||||
Mfr: LSIC1MO120E0080 TTI: LSIC1MO120E0080 IXYS Availability: Not Available OnlineSiC MOSFETs 1200V 80mOhm SiC MOSFET | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 39 A | 80 mOhms | - 5 V, + 20 V | 2.8 V | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | |||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 1.2 kV | 18 A | 200 mOhms | - 10 V, + 22 V | 3.1 V | 25 nC | - 55 C | + 175 C | 109 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247AD-3L | 1 Channel | 1.2 kV | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||||
Mfr: SCT2H12NZGC11 TTI: Not Assigned ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC | 0In Stock | Through Hole | TO-3PFM-3 | 1 Channel | 1.7 kV | 3.7 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 35 W | Enhancement | SCT2H12NZ | ||||
0In Stock | Through Hole | TO-247AD-3L | 1 Channel | 1.2 kV | 53 A | 54 mOhms | - 10 V, + 22 V | 2.9 V | 69 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263CA-7 | 1 Channel | 1.7 kV | 3.9 A | 1.5 Ohms | - 6 V to + 22 V | 4 V | 24 nC | + 175 C | 39 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, + 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | ||||||
Mfr: MXPQ120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement | |||||
Mfr: MXP120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 31 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 45 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: MXPQ120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXP120A045SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 120 A | 4.8 V | 170 nC | + 175 V | 405 W | Enhancement | |||||||||
Mfr: MXP120A045SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 37 A | 4.8 V | 63 nC | + 175 V | 133 W | Enhancement | |||||||||
Mfr: SCT3160KWATL TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V, 17A, 7-pin SMD, Trench-structure, (SiC) MOSFET | 0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | SCT3080AL |