NC - SiC MOSFETs
197 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 14 A | 364 mOhms | - 6 V, + 22 V | 4 V | 36 nC | + 175 C | 108 W | Enhancement | SCT2280KE | ||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | SCT3060AL | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DRHR | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KRHR | ||||||
Not Available Online | Through Hole | TO-247-4 | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3060AR | |||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4013DR | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DE | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 24 A | 62 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | |||||||
Mfr: SCT3022KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs Nch 1200V 95A SiC TO-247N | 0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 95 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | SCT3022KL | ||||
Mfr: IXSA80N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 4.5 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | + 175 C | 165 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KR | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KE | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KEHR | ||||||
0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 46 A | 4.8 V | 72 nC | + 175 V | 164 W | Enhancement | |||||||||
Mfr: IXSH40N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: IXSJ43N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | Through Hole | ISO247-4 | 1 Channel | 1.2 kV | 46 A | 47 mOhms | 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 143.7 W | Enhancement | |||||
Mfr: IXSJ43N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | Through Hole | TO-247-3L | 1 Channel | 1.2 kV | 45 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 142 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | |||||||
Mfr: IXSA40N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: IXSH80N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 10 A | 585 mOhms | - 6 V, + 22 V | 4 V | 27 nC | + 175 C | 85 W | Enhancement | SCT2450KEHR |