NC - SiC MOSFETs
177 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DR | ||||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | SCT3160KW7 | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 14 A | 364 mOhms | - 6 V, + 22 V | 4 V | 36 nC | + 175 C | 108 W | Enhancement | SCT2280KEHR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 10 A | 585 mOhms | - 6 V, + 22 V | 4 V | 27 nC | + 175 C | 85 W | Enhancement | SCT2450KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KE | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 750 V | 98 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 267 W | Enhancement | SCT4013DW7 | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 1.2 kV | 24 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | + 175 C | 165 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 208 mOhms | - 6 V, + 22 V | 4 V | 62 nC | + 175 C | 165 W | Enhancement | SCT2160KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 650 V | 30 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 48 nC | + 175 C | 134 W | Enhancement | SCT3080AL | ||||||
Mfr: SCT3120ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 21A 120mOhm TrenchMOS | 0In Stock | ROHM Semiconductor | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 21 A | 156 mOhms | - 4 V, + 22 V | 5.6 V | 38 nC | + 175 C | 103 W | Enhancement | SCT3120AL | |||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | ||||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | |||||
Mfr: IXSG110N65L2K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL | 0In Stock | IXYS | SMD/SMT | TOLL-8 | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | |||||
Mfr: IXSJ43N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 45 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 142 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KEHR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 55 A | 52 mOhms | - 4 V, + 22 V | 5.6 V | 107 nC | 262 W | Enhancement | ||||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 208 mOhms | - 6 V, + 22 V | 4 V | 62 nC | + 175 C | 165 W | Enhancement | SCT2160KEHR | ||||||
Mfr: IXSA110N65L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KE | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 75 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | Enhancement | |||||||||
Mfr: IXSJ80N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 85 A | 22.5 mOhms | - 4 V, + 21 V | 4.8 V | 154 nC | - 40 C | + 150 C | 266 W | Enhancement |
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