SiC MOSFETs
250 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: LSIC1MO120E0160 TTI: LSIC1MO120E0160 IXYS Availability: Not Available OnlineSiC MOSFETs 1200 V 160 mOhm SiC Mosfet | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 200 mOhms | - 5 V, + 20 V | 1.8 V | 57 nC | - 55 C | + 150 C | 125 W | Enhancement | |||||
Mfr: LSIC1MO120E0080 TTI: LSIC1MO120E0080 IXYS Availability: Not Available OnlineSiC MOSFETs 1200V 80mOhm SiC MOSFET | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 39 A | 80 mOhms | - 5 V, + 20 V | 2.8 V | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | |||||
Mfr: LSIC1MO170E0750 TTI: LSIC1MO170E0750 IXYS Availability: 0In StockSiC MOSFETs TO247 1.7KV 4.4A N-CH SIC | 0In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 6.2 A | 1 Ohms | - 5 V, + 20 V | 4 V | 13 nC | - 55 C | + 175 C | 60 W | Enhancement | |||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3060AR | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSJ43N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 46 A | 47 mOhms | 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 143.7 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | IXYS | SMD/SMT | TTOLL-8 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 750 V | 31 A | 45 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 93 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 106 nC | + 175 C | 262 W | Enhancement | SCT2080KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | + 175 C | 165 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-9 | N Channel | 1 Channel | 750 V | 26 A | 4.8 V | 48 nC | + 175 V | 100 W | Enhancement | |||||||||
Mfr: MXP120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 45 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: MXPQ120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KRHR | ||||||
0In Stock | IXYS | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 208 mOhms | - 6 V, + 22 V | 4 V | 62 nC | + 175 C | 165 W | Enhancement | SCT2160KEHR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DRHR | ||||||
Mfr: IXSA80N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 4.5 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-9 | N Channel | 1 Channel | 750 V | 80 A | 4.8 V | 123 nC | + 175 V | 277 W | Enhancement |
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