SiC MOSFETs
250 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: LSIC1MO120E0080 TTI: LSIC1MO120E0080 IXYS Availability: Not Available OnlineSiC MOSFETs 1200V 80mOhm SiC MOSFET | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 39 A | 80 mOhms | - 5 V, + 20 V | 2.8 V | 95 nC | - 55 C | + 150 C | 179 W | Enhancement | |||||
Mfr: LSIC1MO170E0750 TTI: LSIC1MO170E0750 IXYS Availability: 0In StockSiC MOSFETs TO247 1.7KV 4.4A N-CH SIC | 0In Stock | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 6.2 A | 1 Ohms | - 5 V, + 20 V | 4 V | 13 nC | - 55 C | + 175 C | 60 W | Enhancement | |||||
Mfr: LSIC1MO120E0160 TTI: LSIC1MO120E0160 IXYS Availability: Not Available OnlineSiC MOSFETs 1200 V 160 mOhm SiC Mosfet | Not Available Online | IXYS | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 200 mOhms | - 5 V, + 20 V | 1.8 V | 57 nC | - 55 C | + 150 C | 125 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 750 V | 38 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 115 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 750 V | 22 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4013DR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 14 A | 364 mOhms | - 6 V, + 22 V | 4 V | 36 nC | + 175 C | 108 W | Enhancement | SCT2280KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KEHR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 34 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 115 W | Enhancement | SCT4045DE | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-9 | N Channel | 1 Channel | 750 V | 61 A | 4.8 V | 94 nC | + 175 V | 214 W | Enhancement | |||||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | + 175 C | 262 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSA40N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | IXYS | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
Mfr: IXSH80N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | IXYS | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 24 A | 62 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 93 W | Enhancement | |||||||
Mfr: IXSJ43N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | IXYS | Through Hole | TO-247-3L | N-Channel | 1 Channel | 1.2 kV | 45 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 142 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263CA-7L | N-Channel | 1 Channel | 1.7 kV | 5.6 A | 975 mOhms | - 6 V, + 22 V | 4 V | 28 nC | - 55 C | + 175 C | 53 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 750 V | 38 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 115 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 750 V | 31 A | 59 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 93 W | Enhancement | |||||||
Mfr: MXP120A080SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 32 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 47 nC | - 55 C | + 175 C | 185 W | Enhancement |
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