NC - MOSFETs
5,637 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIRA90DP-T1-GE3 TTI: SIRA90DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 100A Id Qg 48nC Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 650 uOhms | - 16 V, 20 V | 800 mV | 153 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 | ||||
Mfr: SI7450DP-T1-GE3 TTI: SI7450DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 5.3 A | 80 mOhms | 20 V | 4.5 V | 42 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7450DP-GE3 | |||
Mfr: SIHF065N60E-GE3 TTI: SIHF065N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 3 V | 74 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
Mfr: SIHA100N60E-GE3 TTI: SIHA100N60E-GE3 Vishay / Siliconix MOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7998DP-T1-GE3 TTI: SI7998DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 25 A, 30 A | 5.3 mOhms, 9.3 mOhms | 20 V | 2.5 V | 17 nC, 32 nC | - 55 C | + 150 C | 22 W, 40 W | Enhancement | TrenchFET | Reel | SI7998DP-GE3 | |||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 24 A | 400 mOhms | 30 V | 3 V | 105 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIJ482DP-T1-GE3 TTI: SIJ482DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 80 V | 60 A | 6.2 mOhms | 20 V | 1.5 V | 47 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIJ482DP-GE3 | |||
Mfr: IXTK400N15X4 TTI: IXTK400N15X4 IXYS Availability: Not Available OnlineMOSFETs TO264 150V 400A N-CH 4CLASS | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 400 A | 3.1 mOhms | 20 V | 4.5 V | 430 nC | - 55 C | + 175 C | 1.5 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SUM110N10-09-E3 TTI: SUM110N10-09-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V 110A 375W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 110 A | 9.5 mOhms | 20 V | 2 V | 110 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | 30 V | 3 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7846DP-T1-GE3 TTI: SI7846DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 24.5 A | 50 mOhms | 20 V | 4.5 V | 30 nC | - 55 C | + 150 C | 1.9 W | Enhancement | TrenchFET | Reel | SI7846DP-GE3 | |||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 500 V | 22 A | 270 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 350 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 75 V | 520 A | 2.2 mOhms | 20 V | 5 V | 545 nC | - 55 C | + 175 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFP6N120P TTI: IXFP6N120P IXYS Availability: 0In StockMOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1.2 kV | 6 A | 2.75 Ohms | 30 V | 5 V | 92 nC | - 55 C | + 150 C | 250 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 400 mA | 80 Ohms | 20 V | 2 V | 5.8 nC | - 55 C | + 150 C | 25 W | Depletion | Tube | ||||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 200 V | 80 A | 32 mOhms | 20 V | 4 V | 180 nC | - 55 C | + 150 C | 520 W | Enhancement | Linear | Tube | |||||
Mfr: SIDR680DP-T1-GE3 TTI: SIDR680DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 80 V | 100 A | 3.4 mOhms | 20 V | 2 V | 69.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIJA52ADP-T1-GE3 TTI: SIJA52ADP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8L-5 | N-Channel | 1 Channel | 40 V | 131 A | 1.63 mOhms | - 16 V, 20 V | 1.1 V | 100 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel |