NC - MOSFETs
5,605 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4490DY-T1-E3 TTI: SI4490DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI44 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 4 A | 80 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4490DY-E3 | |||
Mfr: SIRA90DP-T1-GE3 TTI: SIRA90DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 100A Id Qg 48nC Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 650 uOhms | - 16 V, 20 V | 800 mV | 153 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHG180N60E-GE3 TTI: SIHG180N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | 30 V | 3 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | |||||
Mfr: SIHA100N60E-GE3 TTI: SIHA100N60E-GE3 Vishay / Siliconix MOSFETs 600V Vds; +/-30V Vgs Thin-Lead TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SISS22LDN-T1-GE3 TTI: SISS22LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 60V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 60 V | 92.5 A | 3.65 mOhms | 20 V | 2.5 V | 17.4 nC, 37.3 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIJA22DP-T1-GE3 TTI: SIJA22DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 25V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 25 V | 201 A | 740 uOhms | - 16 V, 20 V | 2.2 V | 83 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHP054N65E-GE3 TTI: SIHP054N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs E Series Power MOSFET TO-220AB, 58 mohm a. 10V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 22 A | 158 mOhms | 30 V | 5 V | 24 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SI6562CDQ-T1-BE3 TTI: SI6562CDQ-T1-BE3 Vishay Semiconductors Availability: 0In StockMOSFETs TSSOP DUAL CHAN 20V | 0In Stock | Si | SMD/SMT | TSSOP-8 | N-Channel, P-Channel | 2 Channel | 20 V | 6.1 A, 6.7 A | 2 Ohms, 6 Ohms | 12 V | 600 mV | 15 nC, 34 nC | - 55 C | + 150 C | 1.6 W, 1.7 W | Enhancement | Reel | |||||
Mfr: IXFK240N15T2 TTI: IXFK240N15T2 IXYS Availability: Not Available OnlineMOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 240 A | 5.2 mOhms | 20 V | 2.5 V | 460 nC | - 55 C | + 175 C | 1.25 mW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 200 A | 11 mOhms | 20 V | 4.5 V | 540 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | Linear L2 | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 90 A | 33 mOhms | 20 V | 2 V | 640 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 100 mA | 80 Ohms | 20 V | 4.5 V | 5.8 nC | - 55 C | + 150 C | 1.1 W | Depletion | Tube | ||||||
Mfr: IXFK240N25X3 TTI: IXFK240N25X3 IXYS Availability: Not Available OnlineMOSFETs 250V UltraJunc X3 Pwr MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 240 A | 4.1 mOhms | 20 V | 2.5 V | 345 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR688DP-T1-GE3 TTI: SIR688DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 2.9 mOhms | 20 V | 1.3 V | 66 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR770DP-T1-GE3 TTI: SIR770DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 8 A | 21 mOhms | 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 17.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR770DP-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 58 A | 4.25 mOhms | - 16 V, 20 V | 1.1 V | 29 nC | - 55 C | + 150 C | 31.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIRA14DP-GE3 | ||||
Mfr: SI7884BDP-T1-GE3 TTI: SI7884BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 58A 46W 7.5mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 58 A | 7.5 mOhms | 20 V | 3 V | 51 nC | - 55 C | + 155 C | 46 W | Enhancement | TrenchFET | Reel | SI7884BDP-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIA517DJ-T1-GE3 TTI: SIA517DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 29 mOhms, 61 mOhms | 8 V | 400 mV | 15 nC, 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA517DJ-GE3 | |||
Mfr: SI4630DY-T1-GE3 TTI: SI4630DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs SO-8 | 0In Stock | Si | TrenchFET | Reel | SI4630DY-GE3 | |||||||||||||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 800 mA | 4.6 Ohms | 20 V | 4.5 V | 12.7 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
Mfr: SIJ482DP-T1-GE3 TTI: SIJ482DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 80 V | 60 A | 6.2 mOhms | 20 V | 1.5 V | 47 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIJ482DP-GE3 | |||
Mfr: SIR696DP-T1-GE3 TTI: SIR696DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 125V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 125 V | 60 A | 11.5 mOhms | 20 V | 2.5 V | 24.8 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 24 A | 400 mOhms | 30 V | 3 V | 105 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFH160N15T2 TTI: IXFH160N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9 mOhms | 20 V | 4.5 V | 253 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube |