NC - MOSFETs
5,620 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | Reel | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 80 A | 24 mOhms | - 20 V, 20 V | 2.5 V | 103 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 20 A | 30.4 mOhms | - 20 V, 20 V | 2.4 V | 17.4 nC | - 55 C | + 150 C | 29 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 400 mOhms | - 30 V, 30 V | 3 V | 36 nC | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 44 A | 140 mOhms | - 30 V, 30 V | 3 V | 98 nC | - 55 C | + 150 C | 650 W | Enhancement | HiPerFET | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 64 A | 85 mOhms | - 30 V, 30 V | 3 V | 150 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI3585CDV-T1-GE3 TTI: SI3585CDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 N&P PAIR | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.1 A, 3.9 A | 58 mOhms, 195 mOhms | - 8 V, 8 V | 600 mV | 3.2 nC, 6 nC | - 55 C | + 150 C | 1.3 W, 1.4 W | Enhancement | TrenchFET | Reel | SI3585CDV-GE3 | |||
Mfr: SISS64DN-T1-GE3 TTI: SISS64DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 68 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7216DN-T1-GE3 TTI: SI7216DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 40 V | 6 A | 32 mOhms | - 20 V, 20 V | 1 V | 19 nC | - 50 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SI7216DN-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 300 A | 2.5 mOhms | - 20 V, 20 V | 4 V | 145 nC | - 55 C | + 175 C | 480 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI2328DS-T1-GE3 TTI: SI2328DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | - 20 V, 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | TrenchFET | Reel | SI2328DS-T1-BE3 SI2328DS-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 320 A | 3.5 mOhms | - 20 V, 20 V | 4 V | 430 nC | - 55 C | + 175 C | 1 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: IXFH340N075T2 TTI: IXFH340N075T2 IXYS Availability: 0In StockMOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 75 V | 340 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 300 nC | - 55 C | + 175 C | 935 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube | ||||||
Mfr: SIHFL110TR-GE3 TTI: SIHFL110TR-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-223 | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | SIHFL110TR-BE3 | ||||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SIHP24N65E-GE3 TTI: SIHP24N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 650V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 4 V | 81 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIB456DK-T1-GE3 TTI: SIB456DK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 100 V | 6.3 A | 153 mOhms | - 20 V, 20 V | 1.6 V | 5 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: IXTF02N450 TTI: IXTF02N450 IXYS Availability: Not Available OnlineMOSFETs 4500V 200mA HV Power MOSFET | Not Available Online | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
Mfr: SUP40010EL-GE3 TTI: SUP40010EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 40 V | 120 A | 1.47 mOhms | - 20 V, 20 V | 1.2 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SUG90090E-GE3 TTI: SUG90090E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds ThunderFET 100A Id +/-20V Vgs | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 100 A | 7.9 mOhms | - 20 V, 20 V | 2 V | 129 nC | - 55 C | + 175 C | 395 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 650 V | 80 A | 38 mOhms | - 30 V, 30 V | 3.5 V | 140 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 96 A | 24 mOhms | - 20 V, 20 V | 5 V | 145 nC | - 55 C | + 175 C | 600 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 |