MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 86 A | 43 mOhms | - 20 V, 20 V | 5 V | 180 nC | - 55 C | + 150 C | 830 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIS892ADN-T1-GE3 TTI: SIS892ADN-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 28 A | 27 mOhms | - 20 V, 20 V | 1.5 V | 19.5 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS892ADN-GE3 | |||
Mfr: SIA400EDJ-T1-GE3 TTI: SIA400EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 19 mOhms | - 12 V, 12 V | 600 mV | 36 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA400EDJ-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 155 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SI8808DB-T2-E1 TTI: SI8808DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.5 A | 95 mOhms | - 8 V, 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7101DN-T1-GE3 TTI: SI7101DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 68 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 650 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 24 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | ||||||
Mfr: SI8816EDB-T2-E1 TTI: SI8816EDB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.3 A | 109 mOhms | - 12 V, 12 V | 600 mV | 8 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI5442DU-T1-GE3 TTI: SI5442DU-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 8V Vgs PowerPAK ChipFET | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 20 V | 25 A | 10 mOhms | - 8 V, 8 V | 400 mV | 45 nC | - 55 C | + 150 C | 31 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG47N60EF-GE3 TTI: SIHG47N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs RECOMMENDED ALT SIHW | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | - 30 V, 30 V | 2 V | 228 nC | - 55 C | + 150 C | 379 W | Enhancement | Reel | |||||
Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 200 V | 120 A | 30 mOhms | - 15 V, 15 V | 4.5 V | 740 nC | - 55 C | + 150 C | 1.04 kW | Enhancement | TrenchP | Tube | |||||
Mfr: SI3474DV-T1-GE3 TTI: SI3474DV-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 100 V | 3.8 A | 126 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3474DV-T1-BE3 | |||
Mfr: SIA923AEDJ-T1-GE3 TTI: SIA923AEDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V .054ohm@-4.5V -4.5A P-CH | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 20 V | 4.5 A | 44 mOhms | - 8 V, 8 V | 900 mV | 25 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1023CX-T1-GE3 TTI: SI1023CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | P-Channel | 2 Channel | 20 V | 450 mA | 756 mOhms | - 8 V, 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | - 20 V, 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
Mfr: SI4214DDY-T1-E3 TTI: SI4214DDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: IXTF02N450 TTI: IXTF02N450 IXYS Availability: Not Available OnlineMOSFETs 4500V 200mA HV Power MOSFET | Not Available Online | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 78 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 4.5 kV | 200 mA | 625 Ohms | - 20 V, 20 V | 4 V | 10.6 nC | - 55 C | + 150 C | 113 W | Enhancement | Tube | ||||||
Mfr: SIHF28N60EF-GE3 TTI: SIHF28N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 64 A | 32 mOhms | - 20 V, 20 V | 2.5 V | 100 nC | - 55 C | + 150 C | 357 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SUP50020EL-GE3 TTI: SUP50020EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 120 A | 2.3 mOhms | - 20 V, 20 V | 1.2 V | 126 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 600 V | 100 mA | 44 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 125 C | 1.8 W | Depletion | Reel | |||||||
Mfr: SUP60030E-GE3 TTI: SUP60030E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 120 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 141 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 19 A | 184 mOhms | - 30 V, 30 V | 4 V | 46 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-263HV-3 | N-Channel | 1 Channel | 1 kV | 800 mA | 21 Ohms | - 20 V, 20 V | 4 V | 14.6 nC | - 55 C | + 150 C | 60 W | Depletion | Tube |