MOSFETs
13,171 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA928DJ-T1-GE3 TTI: SIA928DJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Dual N-Ch 30V Vds 3nC Qg Typ | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 25 mOhms | - 16 V, 20 V | 1.2 V | 10 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | 30 V | 4 V | 131 nC | - 55 C | + 150 C | 329 W | Enhancement | Reel | ||||||
Mfr: SIHG80N60E-GE3 TTI: SIHG80N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 80 A | 26 mOhms | 30 V | 4 V | 295 nC | - 55 C | + 150 C | 520 W | Enhancement | Reel | |||||
Mfr: SIUD412ED-T1-GE3 TTI: SIUD412ED-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V Vds 5V Vgs PowerPAK 0806 | 0In Stock | Si | SMD/SMT | PowerPAK-0806-3 | N-Channel | 1 Channel | 12 V | 500 mA | 340 mOhms | 5 V | 350 mV | 710 pC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIRA24DP-T1-GE3 TTI: SIRA24DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS73DN-T1-GE3 TTI: SISS73DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs PWRPK 150V 16.2A P-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 16.2 A | 125 mOhms | 20 V | 2 V | 14.6 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 300 V | 38 A | 50 mOhms | 20 V | 2.5 V | 35 nC | - 55 C | + 150 C | 240 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIR150DP-T1-RE3 TTI: SIR150DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 45-V (D-S) MOSFET N-CHANNEL PowerPAK | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 45 V | 110 A | 2.71 mOhms | - 16 V, 20 V | 2.3 V | 46.7 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI5922DU-T1-GE3 TTI: SI5922DU-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 30V Vds 4.7nC Qg Typ | 0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 2 Channel | 30 V | 6 A | 19.2 mOhms | - 16 V, 20 V | 1.2 V | 15 nC | - 55 C | + 150 C | 10.4 W | Enhancement | Reel | |||||
Mfr: SIA469DJ-T1-GE3 TTI: SIA469DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 21 mOhms | 20 V | 3 V | 32 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
Mfr: SISS80DN-T1-GE3 TTI: SISS80DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 20V (D-S) | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 210 A | 920 uOhms | - 8 V, 12 V | 1.5 V | 81 nC | - 55 C | + 150 C | 65 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISS32LDN-T1-GE3 TTI: SISS32LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | 20 V | 2.5 V | 17.7 nC, 37.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIRA18ADP-T1-GE3 TTI: SIRA18ADP-T1-GE3 Vishay Semiconductors MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 30.6 A | 8.7 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 20 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ44PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 75 A | 25 mOhms | 20 V | 3 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
Mfr: SI3493BDV-T1-E3 TTI: SI3493BDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-E3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | ||||
Mfr: SI1967DH-T1-E3 TTI: SI1967DH-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | 8 V | 400 mV | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1967DH-E3 | |||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | 20 V | 4 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube |