MOSFETs
13,237 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFIB6N60APBF TTI: IRFIB6N60APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 5.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 5.5 A | 750 mOhms | 30 V | 2 V | 49 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
Mfr: SI2307CDS-T1-E3 TTI: SI2307CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | 20 V | 1 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-E3 | |||
Mfr: SI4816BDY-T1-GE3 TTI: SI4816BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S | |||
Mfr: IXFH30N50Q3 TTI: IXFH30N50Q3 IXYS Availability: 0In StockMOSFETs Q3Class HiPerFET Pwr MOSFET 500V/30A | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | 30 V | 3.5 V | 62 nC | - 55 C | + 150 C | 690 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Tube | ||||||
Mfr: IRLIZ14GPBF TTI: IRLIZ14GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 8 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 175 C | 25 W | Enhancement | Reel | |||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | 30 V | 2 V | 17 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
Mfr: IRFR120PBF TTI: IRFR120PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 100V 7.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR120PBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | ||||||
Mfr: IRFBF30PBF TTI: IRFBF30PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 3.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBF30PBF-BE3 | ||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
Mfr: IRFBF20LPBF TTI: IRFBF20LPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 900V 1.7 Amp | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | 20 V | 2 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 170 A | 11 mOhms | 20 V | 5 V | 265 nC | - 55 C | + 175 C | 1.15 kW | Enhancement | HiPerFET | Tube | |||||
Mfr: SI2338DS-T1-GE3 TTI: SI2338DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | |||
Mfr: SI4190ADY-T1-GE3 TTI: SI4190ADY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.4 A | 7.3 mOhms | 20 V | 1.5 V | 67 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4190ADY-GE3 | |||
Mfr: SIJ482DP-T1-GE3 TTI: SIJ482DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 80 V | 60 A | 6.2 mOhms | 20 V | 1.5 V | 47 nC | - 55 C | + 150 C | 69.4 W | Enhancement | TrenchFET, PowerPAK | Reel | SIJ482DP-GE3 | |||
Mfr: IXFH160N15T2 TTI: IXFH160N15T2 IXYS Availability: 0In StockMOSFETs Trench T2 HiperFET Power MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 160 A | 9 mOhms | 20 V | 4.5 V | 253 nC | - 55 C | + 175 C | 880 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI1553CDL-T1-GE3 TTI: SI1553CDL-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs SC70-6 N&P PAIR | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel, P-Channel | 2 Channel | 20 V | 700 mA | 390 mOhms, 850 mOhms | 12 V | 1.5 V | 3 nC | - 55 C | + 150 C | 340 mW | Enhancement | TrenchFET | Reel | SI1553CDL-T1-BE3 SI1553DL-T1-GE3 SI1563DH-T1-GE3 SI1563EDH-T1-GE3 SI1555DL-T1-E3-S | |||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SIA447DJ-T1-GE3 TTI: SIA447DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11 mOhms | 8 V | 850 mV | 80 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA447DJ-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 300 mOhms | 30 V | 3 V | 36 nC | - 55 C | + 150 C | 380 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 16 A | 360 mOhms | 30 V | 3 V | 29 nC | - 55 C | + 150 C | 330 W | Enhancement | HiPerFET | Tube |