MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHP6N80E-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | - 30 V, 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 6 A | 2.2 Ohms | - 20 V, 20 V | 2.5 V | 95 nC | - 55 C | + 150 C | 300 W | Depletion | Tube | ||||||
Mfr: SIJ186DP-T1-GE3 TTI: SIJ186DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 60 V | 79.4 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | - 20 V, 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | IRF540PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-GE3 | ||||
Mfr: SUP70101EL-GE3 TTI: SUP70101EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 120 A | 11.4 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIA928DJ-T1-GE3 TTI: SIA928DJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs Dual N-Ch 30V Vds 3nC Qg Typ | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 30 V | 4.5 A | 25 mOhms | - 16 V, 20 V | 1.2 V | 10 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHG80N60E-GE3 TTI: SIHG80N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 600 V | 80 A | 26 mOhms | - 30 V, 30 V | 4 V | 295 nC | - 55 C | + 150 C | 520 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 2.5 V | 254 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SI7806ADN-T1-E3 TTI: SI7806ADN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 14A 0.011Ohm | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 9 A | 11 mOhms | - 20 V, 20 V | 3 V | 13.2 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7806ADN-E3 | |||
Mfr: IRFR420APBF TTI: IRFR420APBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 500V 3.3 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 3.3 A | 3 Ohms | - 30 V, 30 V | 2 V | 17 nC | - 55 C | + 150 C | 83 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 96 W | Enhancement | Reel | IRFBC40APBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 10 V, 10 V | 2 V | 66 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRLZ44PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 30 V, 30 V | 2 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 75 A | 25 mOhms | - 20 V, 20 V | 3 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 6 A | 38 mOhms | - 8 V, 8 V | 1 V | 18 nC | - 55 C | + 150 C | 3.3 W | Enhancement | TrenchFET | Reel | SI3433CDV-T1-BE3 SI3433CDV-GE3 | ||||
Mfr: SI3438DV-T1-GE3 TTI: SI3438DV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 40 V | 7.4 A | 35.5 mOhms | - 20 V, 20 V | 1.4 V | 20 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI3438DV-GE3 | |||
0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 115 mOhms | - 8 V, 8 V | 1 V | 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA913ADJ-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 20 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ44PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 60 A | 5.6 mOhms | - 20 V, 20 V | 3 V | 52 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7994DP-GE3 | ||||
Mfr: SI4630DY-T1-GE3 TTI: SI4630DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs SO-8 | 0In Stock | Si | TrenchFET | Reel | SI4630DY-GE3 | |||||||||||||||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 100 V | 170 A | 9 mOhms | - 20 V, 20 V | 5 V | 198 nC | - 55 C | + 175 C | 714 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | - 8 V, 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 |
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