NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SISHA06DN-T1-GE3 TTI: SISHA06DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 30V PP1212SWLH | 0In Stock | Si | SMD/SMT | PowerPAK1212-8SH | N-Channel | 1 Channel | 30 V | 104 A | 3 mOhms, 4 mOhms | - 16 V, 20 V | 1 V, 2.4 V | 44.6 nC | - 55 C | + 150 C | 52 W | Reel | ||||||
Mfr: SIR466DP-T1-GE3 TTI: SIR466DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.5 mOhms | - 20 V, 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 54 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR466DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 415 V | 5 mA | 14 Ohms | - 20 V, 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | ||||||
Mfr: IRFP244PBF TTI: IRFP244PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 250V 15A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 15 A | 280 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 2.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
Mfr: SIA400EDJ-T1-GE3 TTI: SIA400EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 19 mOhms | - 12 V, 12 V | 600 mV | 36 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA400EDJ-GE3 | |||
Mfr: SIR402DP-T1-GE3 TTI: SIR402DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 35 A | 6 mOhms | - 20 V, 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR402DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 600 V | 100 mA | 44 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 125 C | 1.8 W | Depletion | Reel | |||||||
Mfr: SI1078X-T1-GE3 TTI: SI1078X-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 1 Channel | 30 V | 1.02 A | 142 mOhms | - 12 V, 12 V | 600 mV | 6 nC | - 55 C | + 150 C | 240 mW | Enhancement | Reel | |||||
Mfr: SIHF28N60EF-GE3 TTI: SIHF28N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 3.3 A | 1.8 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF720PBF-BE3 | |||||
Mfr: IRFBC30APBF TTI: IRFBC30APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 3.6A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 3.6 A | 2.2 Ohms | - 30 V, 30 V | 4.5 V | 23 nC | - 55 C | + 150 C | 74 W | Enhancement | Tube | IRFBC30APBF-BE3 | ||||
Mfr: IRFIB6N60APBF TTI: IRFIB6N60APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 5.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 5.5 A | 750 mOhms | - 30 V, 30 V | 2 V | 49 nC | - 55 C | + 150 C | 60 W | Enhancement | Tube | |||||
Mfr: SIR586DP-T1-RE3 TTI: SIR586DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs SOT66 9 NCHA N80V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 64.9 A | 5.3 mOhms | - 20 V, 20 V | 4 V | 25.3 nC | - 55 C | + 150 C | 71.4 W | Enhancement | Reel | |||||
Mfr: IRF830PBF-BE3 TTI: IRF830PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 500V 4.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF830PBF | ||||
Mfr: IRFR220TRLPBF TTI: IRFR220TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBE20PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 46 A | 55 mOhms | - 20 V, 20 V | 2 V | 230 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 8.8 A | 850 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 3.6 A | 3.7 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBF30PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 100 V | 41 A | 55 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: IRFIB7N50APBF TTI: IRFIB7N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 500V 6.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 6.6 A | 520 mOhms | - 30 V, 30 V | 2 V | 52 nC | - 55 C | + 150 C | 60 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.9 A | 180 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel |