NC - MOSFETs
5,605 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 | |||||
Mfr: IRFBE30SPBF TTI: IRFBE30SPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 800V 4.1 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRF540STRRPBF TTI: IRF540STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 28A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
Mfr: SIUD412ED-T1-GE3 TTI: SIUD412ED-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V Vds 5V Vgs PowerPAK 0806 | 0In Stock | Si | SMD/SMT | PowerPAK-0806-3 | N-Channel | 1 Channel | 12 V | 500 mA | 340 mOhms | 5 V | 350 mV | 710 pC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 | |||
Mfr: SI4124DY-T1-GE3 TTI: SI4124DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 7.5 mOhms | 20 V | 1 V | 77 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4124DY-GE3 | |||
Mfr: SI1078X-T1-GE3 TTI: SI1078X-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 1 Channel | 30 V | 1.02 A | 142 mOhms | 12 V | 600 mV | 6 nC | - 55 C | + 150 C | 240 mW | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 600 V | 100 mA | 44 Ohms | 15 V | 3.1 V | - 55 C | + 125 C | 1.8 W | Depletion | Reel | |||||||
Mfr: SIR466DP-T1-GE3 TTI: SIR466DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.5 mOhms | 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 54 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR466DP-GE3 | |||
Mfr: SIHF28N60EF-GE3 TTI: SIHF28N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 28 A | 123 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-223-3 | N-Channel | 1 Channel | 415 V | 5 mA | 14 Ohms | 20 V | 3.6 V | - 40 C | + 85 C | 2.5 W | Depletion | Clare | Reel | ||||||
Mfr: SIA400EDJ-T1-GE3 TTI: SIA400EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 19 mOhms | 12 V | 600 mV | 36 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA400EDJ-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | |||||
Mfr: SI8800EDB-T2-E1 TTI: SI8800EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.8 A | 80 mOhms | 8 V | 400 mV | 8.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SUM65N20-30-E3 TTI: SUM65N20-30-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V 65A 375W 30mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 65 A | 30 mOhms | 20 V | 2 V | 130 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM65N20-30 | |||
Mfr: SIR512DP-T1-RE3 TTI: SIR512DP-T1-RE3 Vishay Availability: 0In StockMOSFETs SOT669 100V 100A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 100 V | 100 A | 4.5 mOhms | 10 V | 4 V | 30.5 nC | Enhancement | PowerPak | Reel | |||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 65 mOhms | 30 V | 4 V | 152 nC | - 55 C | + 150 C | 379 W | Enhancement | Reel | ||||||
Mfr: SIR416DP-T1-GE3 TTI: SIR416DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 50 A | 3.8 mOhms | 20 V | 1.2 V | 90 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR416DP-GE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | 20 V | 3 V | 2.8 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-GE3 | ||||
Mfr: IXFK32N100Q3 TTI: IXFK32N100Q3 IXYS Availability: Not Available OnlineMOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/32A | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 32 A | 320 mOhms | 30 V | 6.5 V | 195 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
Mfr: SI2304DDS-T1-BE3 TTI: SI2304DDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30 V (D-S) | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.6 A | 60 mOhms | 20 V | 1.2 V | 6.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2304DDS-T1-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-GE3 | ||||
Mfr: IRLIZ44GPBF TTI: IRLIZ44GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 30 Amp | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 28 mOhms | 10 V | 1 V | 66 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | SIHP12N60E-GE3 SIHP12N60E-E3 |