Vishay - MOSFETs
8,394 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR880BDP-T1-RE3 TTI: SIR880BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 70.6 A | 8 mOhms | 20 V | 2.4 V | 66 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
Mfr: SIR510DP-T1-RE3 TTI: SIR510DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 126A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 126 A | 3.6 mOhms | 20 V | 4 V | 54 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA485DJ-T1-GE3 TTI: SIA485DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 150 V | 1.6 A | 2.7 Ohms | 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIA468DJ-T1-GE3 TTI: SIA468DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 37.8 A | 8.4 mOhms | - 16 V, 20 V | 1 V | 22 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI7615CDN-T1-GE3 TTI: SI7615CDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 7.2 mOhms | 8 V | 1 V | 111 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIHJ10N60E-T1-GE3 TTI: SIHJ10N60E-T1-GE3 Vishay Semiconductors MOSFETs 600V Vds 30V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 600 V | 10 A | 313 mOhms | 30 V | 4.5 V | 25 nC | - 55 C | + 150 C | 89 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 40 A | 70 mOhms | 30 V | 2 V | 189 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | ||||||
Mfr: SIJ438ADP-T1-GE3 TTI: SIJ438ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 45.3 A | 1.35 mOhms | - 16 V, 20 V | 1.1 V | 162 nC | - 55 C | + 150 C | 69.4 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
Mfr: SI4062DY-T1-GE3 TTI: SI4062DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 32.1 A | 4.2 mOhms | 20 V | 1.4 V | 40 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIS447DN-T1-GE3 TTI: SIS447DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 12.5 mOhms | 12 V | 1.2 V | 181 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI7880ADP-T1-E3 TTI: SI7880ADP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 40A 83W | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3 mOhms | 20 V | 3 V | 84 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7880ADP-E3 | |||
Mfr: SUM65N20-30-E3 TTI: SUM65N20-30-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V 65A 375W 30mohm @ 10V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 65 A | 30 mOhms | 20 V | 2 V | 130 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM65N20-30 | |||
0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: IRFR430ATRPBF TTI: IRFR430ATRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 500V 5A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 5 A | 1.7 Ohms | 30 V | 2 V | 24 nC | - 55 C | + 150 C | 110 W | Enhancement | Reel | |||||
Mfr: SI4386DY-T1-E3 TTI: SI4386DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 16A 3.1W 7.0mohm @ 10V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 16 A | 7 mOhms | 20 V | 2.5 V | 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4386DY-E3 | ||||
Mfr: SI7430DP-T1-E3 TTI: SI7430DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 150V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 26 A | 45 mOhms | 20 V | 3.5 V | 43 nC | - 55 C | + 150 C | 64 W | Enhancement | TrenchFET | Reel | SI7430DP-E3 | |||
Mfr: IRFU9014PBF TTI: IRFU9014PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 60V 5.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: IRFI840GLCPBF TTI: IRFI840GLCPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 500V 4.5A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.5 A | 850 mOhms | 30 V | 2 V | 39 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
Mfr: SI4166DY-T1-GE3 TTI: SI4166DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 30.5 A | 3.9 mOhms | 20 V | 1.2 V | 65 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET | Reel | SI4166DY-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 13 A | 30 mOhms | 25 V | 3 V | 65 nC | - 55 C | + 150 C | 5.6 W | Enhancement | TrenchFET | Reel | SI4835DDY-E3 | ||||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SIR166DP-T1-GE3 TTI: SIR166DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 3.2 mOhms | 20 V | 1.2 V | 77 nC | - 55 C | + 150 C | 48 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR166DP-GE3 |