Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIDR626DP-T1-GE3 TTI: SIDR626DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.7 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR167DP-T1-GE3 TTI: SIR167DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | - 25 V, 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHA180N60E-GE3 TTI: SIHA180N60E-GE3 Vishay Semiconductors MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIHB35N60EF-GE3 TTI: SIHB35N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 32 A | 97 mOhms | - 30 V, 30 V | 2 V | 134 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
Mfr: SIHH180N60E-T1-GE3 TTI: SIHH180N60E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 33 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | - 30 V, 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors MOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM40012EL-GE3 TTI: SUM40012EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds +/-20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 150 A | 1.67 mOhms | - 20 V, 20 V | 1 V | 195 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61 A | 40 mOhms | - 30 V, 30 V | 3 V | 84 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 18.3 A | 9.5 mOhms | - 20 V, 16 V | 2.2 V | 27 nC | - 55 C | + 150 C | 4.8 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | - 20 V, 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
Mfr: SIRC18DP-T1-GE3 TTI: SIRC18DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 850 uOhms | - 16 V, 20 V | 1 V | 111 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISA01DN-T1-GE3 TTI: SISA01DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 20 V, 16 V | 2.2 V | 56 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR690DP-T1-RE3 TTI: SIR690DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 34.4 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 60 V | 165 A | 1.75 mOhms | - 20 V, 20 V | 3.5 V | 55 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 16 A | 68 mOhms | - 30 V, 30 V | 5 V | 51 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 100 V | 81 A | 6.1 mOhms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 100 W | Enhancement | PowerPAK | Reel | ||||||
Mfr: SI2319CDS-T1-BE3 TTI: SI2319CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 40V (D-S | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840APBF | |||||
Mfr: IRF9Z30PBF-BE3 TTI: IRF9Z30PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF9Z30PBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBG20PBF | |||||
Mfr: SIA427DJ-T1-GE3 TTI: SIA427DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 8V 12A 19W 13mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 8 V | 12 A | 95 mOhms | - 5 V, 5 V | 800 mV | 50 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA427DJ-GE3 | |||
Mfr: SIZF906BDT-T1-GE3 TTI: SIZF906BDT-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PWRPR N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5F-8 | N-Channel | 2 Channel | 30 V | 105 A, 257 A | 680 uOhms, 2.1 mOhms | - 16 V, 20 V | 2.2 V | 25 nC, 81 nC | - 55 C | + 150 C | 38 W, 83 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 146 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 76 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel |
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