Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 50 A | 2.3 mOhms | - 12 V, 12 V | 600 mV | 133 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR800DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 12 V | 4 A | 34 mOhms | - 10 V, 10 V | 1 V | 36 nC | - 55 C | + 150 C | 1.6 W | Enhancement | TrenchFET | Reel | SI1401EDH-T1-BE3 SI1401EDH-GE3 | ||||
Mfr: SIHFR220TRL-GE3 TTI: SIHFR220TRL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs MOSFET N-CHANNEL 200V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SI4154DY-T1-GE3 TTI: SI4154DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 36 A | 3.3 mOhms | - 20 V, 20 V | 1 V | 105 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4154DY-GE3 | |||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.7 A | 9.8 mOhms | - 20 V, 20 V | 1.2 V | 53 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4425DDY-GE3 | ||||
Mfr: SIA929DJ-T1-GE3 TTI: SIA929DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 52 mOhms, 52 mOhms | - 12 V, 12 V | 1.1 V | 21 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA929DJ-GE3 | |||
Mfr: SI4090DY-T1-GE3 TTI: SI4090DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 19.7 A | 8 mOhms | - 20 V, 20 V | 2 V | 69 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4090DY-GE3 | |||
Mfr: SIR401DP-T1-GE3 TTI: SIR401DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 50 A | 2.5 mOhms | - 12 V, 12 V | 1.5 V | 310 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR401DP-GE3 | |||
Mfr: SIHW33N60E-GE3 TTI: SIHW33N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AD | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIR826ADP-T1-GE3 TTI: SIR826ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 60 A | 4.6 mOhms | - 20 V, 20 V | 1.2 V | 86 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 47 A | 64 mOhms | - 30 V, 30 V | 4 V | 148 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
Mfr: SIR846ADP-T1-GE3 TTI: SIR846ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 60 A | 6.5 mOhms | - 20 V, 20 V | 1.8 V | 66 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR846ADP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 24 A | 6 mOhms | - 20 V, 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4156DY-GE3 | ||||
Mfr: SIB422EDK-T1-GE3 TTI: SIB422EDK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 9 A | 30 mOhms | - 8 V, 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB422EDK-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 14.5 A | 243 mOhms | - 30 V, 30 V | 4 V | 33 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | SIHP15N50E-BE3 | |||||
Mfr: SIS447DN-T1-GE3 TTI: SIS447DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 18 A | 12.5 mOhms | - 12 V, 12 V | 1.2 V | 181 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIS888DN-T1-GE3 TTI: SIS888DN-T1-GE3 Vishay Semiconductors MOSFETs 150V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 150 V | 20.2 A | 58 mOhms | - 20 V, 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 52 W | Enhancement | ThunderFET | Reel | ||||
Mfr: SIA485DJ-T1-GE3 TTI: SIA485DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 150 V | 1.6 A | 2.7 Ohms | - 20 V, 20 V | 4.5 V | 6.3 nC | - 55 C | + 150 C | 15.6 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1308EDL-T1-GE3 TTI: SI1308EDL-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs SC70-3 | 0In Stock | Si | SMD/SMT | SOT-323-3 | N-Channel | 1 Channel | 30 V | 1.5 A | 132 mOhms | - 12 V, 12 V | 1.5 V | 2.7 nC | - 55 C | + 150 C | 400 mW | Enhancement | TrenchFET | Reel | SI1308EDL-T1-BE3 SI1304BDL-T1-GE3 SI1300BDL-T1-GE3 | |||
Mfr: SISA12ADN-T1-GE3 TTI: SISA12ADN-T1-GE3 Vishay Semiconductors MOSFETs For New Design See: 78-SISHA12ADN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | - 16 V, 20 V | 1.1 V | 45 nC | - 55 C | + 150 C | 28 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 35 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel | ||||||
Mfr: SUD50P10-43L-GE3 TTI: SUD50P10-43L-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V 37A P-Channel | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 36.4 A | 43 mOhms | - 20 V, 20 V | 1 V | 106 nC | - 55 C | + 150 C | 113.6 W | Enhancement | TrenchFET | Reel | SUD50P10-43L-BE3 | |||
Mfr: SIR472ADP-T1-GE3 TTI: SIR472ADP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 18 A | 9 mOhms | - 20 V, 20 V | 1.1 V | 28 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4062DY-T1-GE3 TTI: SI4062DY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 32.1 A | 4.2 mOhms | - 20 V, 20 V | 1.4 V | 40 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel |