Vishay - MOSFETs
8,247 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 500 V | 2.4 A | 3 Ohms | - 20 V, 20 V | 4 V | 19 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 1.7 A | 240 mOhms | - 20 V, 20 V | 2 V | 12.1 nC | - 55 C | + 150 C | 1.5 W | Enhancement | TrenchFET | Reel | SI7820DN-T1 | ||||
Mfr: SI7922DN-T1-E3 TTI: SI7922DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | - 20 V, 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-T1 | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF9Z30PBF-BE3 | |||||
Mfr: IRFZ48RSPBF TTI: IRFZ48RSPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 50 Amp | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 18 mOhms | - 20 V, 20 V | 4 V | 110 nC | - 55 C | + 175 C | 190 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 18 A | 140 mOhms | - 20 V, 20 V | 4 V | 34 nC | - 55 C | + 175 C | 88 W | Enhancement | Tube | IRF9Z34PBF-BE3 | |||||
Mfr: IRFP22N50APBF TTI: IRFP22N50APBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 500V 22A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 22 A | 230 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 277 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 7.8 A | 1.2 Ohms | - 20 V, 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 400 V | 3.1 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | ||||||
Mfr: IRF9630SPBF TTI: IRF9630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 6.5A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 200 V | 6.5 A | 800 mOhms | - 20 V, 20 V | 4 V | 29 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | - 30 V, 30 V | 2 V | 60 nC | - 55 C | + 150 C | 130 W | Enhancement | Reel | ||||||
Mfr: IRF9530STRLPBF TTI: IRF9530STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 12A P-CH MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 12 A | 300 mOhms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 18.3 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 38.5 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | ||||
Mfr: SI7892BDP-T1-GE3 TTI: SI7892BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V 25A 5.4W 4.2mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 15 A | 4.2 mOhms | - 20 V, 20 V | 3 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7892BDP-GE3 | |||
Mfr: SI7922DN-T1-GE3 TTI: SI7922DN-T1-GE3 Vishay Semiconductors MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 100 V | 2.5 A | 195 mOhms | - 20 V, 20 V | 3.5 V | 5.2 nC | - 55 C | + 150 C | 2.6 W | Enhancement | TrenchFET | Reel | SI7922DN-GE3 | |||
Mfr: SI4420BDY-T1-GE3 TTI: SI4420BDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 13.5A 2.5W 8.5mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 13.5 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI4420BDY-GE3 | |||
Mfr: SI7884BDP-T1-GE3 TTI: SI7884BDP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 58A 46W 7.5mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 58 A | 7.5 mOhms | - 20 V, 20 V | 3 V | 51 nC | - 55 C | + 155 C | 46 W | Enhancement | TrenchFET | Reel | SI7884BDP-GE3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 150 V | 5 A | 50 mOhms | - 20 V, 20 V | 2 V | 36 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4488DY-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 53 A | 16 mOhms | - 20 V, 20 V | 3 V | 115 nC | - 55 C | + 150 C | 104.2 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 75 V | 28 A | 11 mOhms | - 20 V, 20 V | 2.5 V | 68 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7148DP-E3 | ||||
Mfr: IRFP250PBF TTI: IRFP250PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO247 200V 30A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 30 A | 85 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 60 V | 70 A | 14 mOhms | - 20 V, 20 V | 2 V | 160 nC | - 55 C | + 175 C | 230 W | Enhancement | Reel | ||||||
Mfr: IRFU220PBF TTI: IRFU220PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 200V 4.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel |
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