Vishay Semiconductors - MOSFETs
2,243 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 55,000In StockMOSFETs -40V Vds 20V Vgs SO-8 | 55,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: IRFR220TRPBF TTI: IRFR220TRPBF Vishay Semiconductors Availability: 4,000In StockMOSFETs N-Chan 200V 4.8 Amp | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 500V TO247 | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SUM110P06-07L-E3 TTI: SUM110P06-07L-E3 Vishay Semiconductors Availability: 4,000In StockMOSFETs 60V 110A 375W | 4,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 60 V | 110 A | 6.9 mOhms | 20 V | 1 V | 230 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | SUM110P06-07L | |||
Mfr: IRFL110TRPBF TTI: IRFL110TRPBF Vishay Semiconductors Availability: 5,000In StockMOSFETs N-Chan 100V 1.5 Amp | 5,000In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | ||||
Mfr: IRF540STRLPBF TTI: IRF540STRLPBF Vishay Semiconductors Availability: 8,800In StockMOSFETs 100V N-CH HEXFET D2-PAK | 8,800In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 2 V | 72 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Tube | |||||
Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SI2302CDS-T1-E3 TTI: SI2302CDS-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.6 A | 57 mOhms | 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 710 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-E3 | |||
Mfr: SI7223DN-T1-GE3 TTI: SI7223DN-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 2 Channel | 30 V | 6 A | 26.4 mOhms | 20 V | 1 V | 26.3 nC | - 55 C | + 150 C | 23 W | Enhancement | Reel | |||||
Mfr: SI7949DP-T1-E3 TTI: SI7949DP-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-E3 | |||
Mfr: SI4840BDY-T1-E3 TTI: SI4840BDY-T1-E3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 40V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 19 A | 9 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4840BDY-E3 | |||
Mfr: SUD19P06-60-GE3 TTI: SUD19P06-60-GE3 Vishay Semiconductors Availability: 2,000In StockMOSFETs 60V 19A 38.5W 60mohm @ 10V | 2,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD19P06-60-BE3 | |||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -30V Vds 20V Vgs SO-8 | 5,000In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 500In StockMOSFETs N-CH 250V HEXFET MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SIS476DN-T1-GE3 TTI: SIS476DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS476DN-GE3 | |||
Mfr: IRFR9120TRPBF TTI: IRFR9120TRPBF Vishay Semiconductors Availability: 4,000In StockMOSFETs P-CH -100V HEXFET MOSFET D-PAK | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 5.6 A | 600 mOhms | 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: SI7469DP-T1-E3 TTI: SI7469DP-T1-E3 Vishay Semiconductors Availability: 18,000In StockMOSFETs -80V Vds 20V Vgs PowerPAK SO-8 | 18,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 80 V | 28 A | 29 mOhms | 20 V | 3 V | 160 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7469DP-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 4 V | 39 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840LCPBF-BE3 | |||||
Mfr: SI7625DN-T1-GE3 TTI: SI7625DN-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 12,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 5.6 mOhms | 20 V | 2.5 V | 126 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7625DN-GE3 | |||
Mfr: SIA975DJ-T1-GE3 TTI: SIA975DJ-T1-GE3 Vishay Semiconductors Availability: 42,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 42,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | |||
Mfr: IRF9610PBF TTI: IRF9610PBF Vishay Semiconductors Availability: 350In StockMOSFETs P-CH -200V HEXFET MOSFET | 350In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF-BE3 | ||||
Mfr: SI1469DH-T1-E3 TTI: SI1469DH-T1-E3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 6,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 SI1469DH-E3 | |||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 19,200In StockMOSFETs N-CH 400V MOSFET MOSFET D2-PA | 19,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI4368DY-T1-E3 TTI: SI4368DY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs 30 Volt 25 Amp 3.5W | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 25 A | 3.2 mOhms | 12 V | 600 mV | 80 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI4368DY-T1 |