Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUD08P06-155L-GE3 TTI: SUD08P06-155L-GE3 Vishay Semiconductors Availability: 4,000In StockMOSFETs -30V 0.155ohm@-10V -8.4A P-CH | 4,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 8.2 A | 280 mOhms | - 20 V, 20 V | 2 V | 19 nC | - 55 C | + 150 C | 20.8 W | Enhancement | TrenchFET | Reel | SUD08P06-155L-BE3 | |||
Mfr: SUD15N15-95-E3 TTI: SUD15N15-95-E3 Vishay Semiconductors Availability: 16,000In StockMOSFETs RECOMMENDED ALT SUD1 | 16,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 150 V | 15 A | 95 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 62 W | Enhancement | TrenchFET | Reel | SUD15N15-95-BE3 | |||
Mfr: SI4214DDY-T1-GE3 TTI: SI4214DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | - 20 V, 20 V | 1.2 V | 14.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4920DY-T1-E3-S | |||
Mfr: IRFP460APBF TTI: IRFP460APBF Vishay Semiconductors Availability: 500In StockMOSFETs N-CH 500V HEXFET MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | - 30 V, 30 V | 2 V | 105 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | |||||
Mfr: SI4401DDY-T1-GE3 TTI: SI4401DDY-T1-GE3 Vishay Semiconductors Availability: 57,500In StockMOSFETs -40V Vds 20V Vgs SO-8 | 57,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 40 V | 16.1 A | 15 mOhms | - 20 V, 20 V | 1.2 V | 64 nC | - 55 C | + 150 C | 6.3 W | Enhancement | TrenchFET | Reel | SI4401DDY-GE3 | |||
Mfr: IRF9640PBF TTI: IRF9640PBF Vishay Semiconductors Availability: 10,000In StockMOSFETs 200V P-CH HEXFET MOSFET | 10,000In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF9640PBF-BE3 | ||||
Mfr: IRFR9220TRPBF TTI: IRFR9220TRPBF Vishay Semiconductors Availability: 2,000In Stock4,000 On Order Expected 13-Aug-27 MOSFETs 200V P-CH HEXFET MOSFET D | 2,000In Stock4,000 On Order Expected 13-Aug-27 | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF-BE3 | ||||
Mfr: SI2302CDS-T1-GE3 TTI: SI2302CDS-T1-GE3 Vishay Semiconductors Availability: 825,000In StockMOSFETs 20V Vds 8V Vgs SOT-23 | 825,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-BE3 SI2302CDS-GE3 | |||
Mfr: SI7949DP-T1-E3 TTI: SI7949DP-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -60V Vds 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 2 Channel | 60 V | 5 A | 64 mOhms | - 20 V, 20 V | 3 V | 26 nC | - 55 C | + 150 C | 3.5 W | Enhancement | TrenchFET | Reel | SI7949DP-E3 | |||
Mfr: SI4435DDY-T1-GE3 TTI: SI4435DDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs -30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 11.4 A | 24 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4435DDY-GE3 | |||
Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 3,000In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | - 16 V, 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: IRFP254PBF TTI: IRFP254PBF Vishay Semiconductors Availability: 500In StockMOSFETs N-CH 250V HEXFET MOSFET | 500In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 23 A | 140 mOhms | - 20 V, 20 V | 2 V | 140 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SIS476DN-T1-GE3 TTI: SIS476DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS476DN-GE3 | |||
Mfr: SI5457DC-T1-GE3 TTI: SI5457DC-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs -20V Vds 12V Vgs 1206-8 ChipFET | 3,000In Stock | Si | SMD/SMT | ChipFET-8 | P-Channel | 1 Channel | 20 V | 6 A | 56 mOhms | - 12 V, 12 V | 1.4 V | 38 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5457DC-GE3 | |||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | |||
Mfr: SI7137DP-T1-GE3 TTI: SI7137DP-T1-GE3 Vishay Semiconductors Availability: 24,000In StockMOSFETs -20V Vds 12V Vgs PowerPAK SO-8 | 24,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.95 mOhms | - 12 V, 12 V | 1.4 V | 390 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7137DP-GE3 | |||
Mfr: SIA975DJ-T1-GE3 TTI: SIA975DJ-T1-GE3 Vishay Semiconductors Availability: 66,000In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 66,000In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 33 mOhms, 33 mOhms | - 8 V, 8 V | 1 V | 26 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA975DJ-GE3 | |||
Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 19,200In StockMOSFETs N-CH 400V MOSFET MOSFET D2-PA | 19,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: IRF9610PBF TTI: IRF9610PBF Vishay Semiconductors Availability: 450In StockMOSFETs P-CH -200V HEXFET MOSFET | 450In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 1.8 A | 3 Ohms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 20 W | Enhancement | Tube | IRF9610PBF-BE3 | ||||
Mfr: SI1469DH-T1-E3 TTI: SI1469DH-T1-E3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 12V Vgs SC70-6 | 9,000In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 1 Channel | 20 V | 2.7 A | 155 mOhms | - 12 V, 12 V | 1.5 V | 8.5 nC | - 55 C | + 150 C | 2.78 W | Enhancement | TrenchFET | Reel | SI1469DH-T1-BE3 SI1469DH-E3 | |||
Mfr: IRFBE30PBF TTI: IRFBE30PBF Vishay Semiconductors Availability: 2,000In StockMOSFETs TO220 800V 4.1A N-CH MOSFET | 2,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBE30PBF-BE3 | ||||
Mfr: SI2303CDS-T1-GE3 TTI: SI2303CDS-T1-GE3 Vishay Semiconductors Availability: 354,000In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 354,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 2.7 A | 190 mOhms | - 20 V, 20 V | 3 V | 2 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI2303CDS-T1-BE3 SI2303BDS-T1-E3-S | |||
Mfr: SI4816BDY-T1-GE3 TTI: SI4816BDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S | |||
Mfr: SI5515CDC-T1-GE3 TTI: SI5515CDC-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs -20V Vds 8V Vgs 1206-8 ChipFET | 9,000In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel, P-Channel | 2 Channel | 20 V | 4 A | 36 mOhms, 100 mOhms | - 8 V, 8 V | 400 mV, 800 mV | 11.3 nC, 11 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI5515CDC-GE3 | |||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-Chan 800V 4.1 Amp | 1,000In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube |
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