Vishay Semiconductors - MOSFETs
2,253 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA913ADJ-T1-GE3 TTI: SIA913ADJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 12V 4.5A 6.5W 61mohm @ 4.5V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 12 V | 4.5 A | 115 mOhms | 8 V | 1 V | 20 nC | - 55 C | + 150 C | 6.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA913ADJ-GE3 | |||
Mfr: SI4630DY-T1-E3 TTI: SI4630DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 25 V | 40 A | 2.7 mOhms | 16 V | 1 V | 161 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4630DY-E3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 10 V | 1 V | 8.4 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
Mfr: IRFR014TRLPBF TTI: IRFR014TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 N CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | 20 V | 4 V | 11 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR014TRLPBF-BE3 | ||||
Mfr: IRFI720GPBF TTI: IRFI720GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 400V 2.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2.6 A | 1.8 Ohms | 20 V | 2 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | 20 V | 4 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF630PBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 | |||
Mfr: SI4456DY-T1-E3 TTI: SI4456DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 33A 7.8W 3.8mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 33 A | 3.8 mOhms | 20 V | 1.5 V | 122 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4456DY-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | 10 V | 2 V | 8.4 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRLZ14PBF-BE3 | |||||
Mfr: SIZF916DT-T1-GE3 TTI: SIZF916DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5F | 0In Stock | Si | SMD/SMT | PowerPAIR-6x5-8 | N-Channel, NPN | 2 Channel | 30 V | 40 A, 60 A | 12.7 mOhms, 6.58 mOhms | - 12 V, 16 V | 1.1 V | 14.6 nC, 62 nC | - 55 C | + 150 C | 26.6 W, 60 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIRA80DP-T1-RE3 TTI: SIRA80DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 620 uOhms | - 16 V, 20 V | 2.2 V | 125 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 8 A | 26 mOhms | 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3424CDV-T1-BE3 | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 30 V | 8 A | 36 mOhms | 20 V | 3 V | 50 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIS435DNT-T1-GE3 TTI: SIS435DNT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK 1212-8T | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 30 A | 4.4 mOhms | 8 V | 900 mV | 180 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI8406DB-T2-E1 TTI: SI8406DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 20 V | 16 A | 33 mOhms | 8 V | 400 mV | 20 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 40 V | 12 A | 26 mOhms | 12 V | 600 mV | 21.5 nC | - 50 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SISS32LDN-T1-GE3 TTI: SISS32LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | 20 V | 2.5 V | 17.7 nC, 37.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | ||||||
Mfr: SUM70101EL-GE3 TTI: SUM70101EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SUP70101EL-GE3 TTI: SUP70101EL-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 120 A | 11.4 mOhms | 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2323CDS-T1-BE3 SI2323CDS-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 20 V | 60 A | 1.9 mOhms | 20 V | 2.3 V | 265 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | SI7141DP-GE3 | ||||
Mfr: SIA427DJ-T1-GE3 TTI: SIA427DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 8V 12A 19W 13mohms @ 4.5V | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 8 V | 12 A | 95 mOhms | 5 V | 800 mV | 50 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | SIA427DJ-GE3 |