Vishay Semiconductors - MOSFETs
2,238 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRFR310TRPBF TTI: IRFR310TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 400V 1.7 Amp | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 400 V | 1.7 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR310TRPBF-BE3 | ||||
Mfr: SIHB33N60EF-GE3 TTI: SIHB33N60EF-GE3 Vishay Semiconductors MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SISA10DN-T1-GE3 TTI: SISA10DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs For New Design See: 78-SISHA10DN-T1-GE3 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 30 A | 2.8 mOhms | - 16 V, 20 V | 1.1 V | 51 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET, PowerPAK | Reel | SISA10DN-GE3 | |||
Mfr: SI7972DP-T1-GE3 TTI: SI7972DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 60 V | 8 A | 18 mOhms | - 20 V, 20 V | 2.7 V | 15.2 nC | - 55 C | + 150 C | 22 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.4 mOhms | - 20 V, 20 V | 3.5 V | 102 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SI8851EDB-T2-E1 TTI: SI8851EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICROFOOT | 0In Stock | Si | SMD/SMT | MicroFoot-30 | P-Channel | 1 Channel | 20 V | 16.7 A | 6 mOhms | - 8 V, 8 V | 1 V | 180 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIDR402EP-T1-RE3 TTI: SIDR402EP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 40 V | 291 A | 960 uOhms | - 16 V, 20 V | 2.3 V | 165 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | ||||||
Mfr: SISH106DN-T1-GE3 TTI: SISH106DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; +/-12V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 20 V | 19.5 A | 6.2 mOhms | - 12 V, 12 V | 600 mV | 27 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISH112DN-T1-GE3 TTI: SISH112DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH | N-Channel | 1 Channel | 30 V | 17.8 A | 7.5 mOhms | - 12 V, 12 V | 600 mV | 27 nC | - 50 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS30LDN-T1-GE3 TTI: SISS30LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Nch 80V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK1212-8 | N-Channel | 1 Channel | 80 V | 55.5 A | 8.5 mOhms | - 20 V, 20 V | 1 V | 50 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI4485DY-T1-GE3 TTI: SI4485DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 6.0A 5.0W 42mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 6 A | 72 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4485DY-GE3 | |||
Mfr: SI7116DN-T1-E3 TTI: SI7116DN-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 16.4A 3.8W 7.8mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 16.4 A | 7.8 mOhms | - 20 V, 20 V | 2.5 V | 15 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7116DN-E3 | |||
Mfr: IRF9Z10PBF TTI: IRF9Z10PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRF9 | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 60 V | 6.7 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF9Z10PBF-BE3 | ||||
Mfr: IRLIZ44GPBF TTI: IRLIZ44GPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 60V 30 Amp | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 30 A | 28 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | |||||
Mfr: IRF9Z20PBF TTI: IRF9Z20PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 50V 9.7 Amp | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 9.7 A | 280 mOhms | - 20 V, 20 V | 4 V | 26 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 150 C | 113 W | Enhancement | TrenchFET | Reel | SUD50P06-15-BE3 | ||||
Mfr: SI7658ADP-T1-GE3 TTI: SI7658ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 2.2 mOhms | - 20 V, 20 V | 1.2 V | 110 nC | - 55 C | + 150 C | 83 W | Enhancement | TrenchFET | Reel | SI7658ADP-GE3 | |||
Mfr: SI4825DDY-T1-GE3 TTI: SI4825DDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 14.9 A | 12.5 mOhms | - 25 V, 25 V | 1.4 V | 57 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4825DDY-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 16 A | 400 mOhms | - 30 V, 30 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247AC-3 | P-Channel | 1 Channel | 200 V | 12 A | 500 mOhms | - 20 V, 20 V | 2 V | 44 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 9.6 A | 11 mOhms | - 20 V, 20 V | 4 V | 57 nC | - 55 C | + 150 C | 5.2 W | Enhancement | TrenchFET | Reel | SI7370DP-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 14 A | 14 mOhms | - 20 V, 20 V | 1.2 V | 23 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4134DY-E3 |
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