Vishay / Siliconix - MOSFETs
4,720 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SISS4410DN-T1-GE3 TTI: SISS4410DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 40V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 40 V | 36 A | 9 mOhms | - 16 V, 20 V | 2.4 V | 5.3 nC | - 55 C | + 150 C | 19.8 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHP6N80E-GE3 | |||||
Mfr: SUM50020EL-GE3 TTI: SUM50020EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 120 A | 2.1 mOhms | - 20 V, 20 V | 1.2 V | 126 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI4842BDY-T1-GE3 TTI: SI4842BDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V 28A 6.25W 4.2mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | - 20 V, 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-GE3 | |||
Mfr: SIRA24DP-T1-GE3 TTI: SIRA24DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 25V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 25 V | 60 A | 1.15 mOhms | - 16 V, 20 V | 1 V | 55 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61 A | 40 mOhms | - 30 V, 30 V | 3 V | 84 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | ||||||
Mfr: SIR150DP-T1-RE3 TTI: SIR150DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 45-V (D-S) MOSFET N-CHANNEL PowerPAK | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 45 V | 110 A | 2.71 mOhms | - 16 V, 20 V | 2.3 V | 46.7 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2319CDS-T1-BE3 TTI: SI2319CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CHANNEL 40V (D-S | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-GE3 | |||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIHF12N60E-GE3 TTI: SIHF12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | |||||
Mfr: SIR690DP-T1-RE3 TTI: SIR690DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 34.4 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 48 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIRA60DP-T1-RE3 TTI: SIRA60DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 780 uOhms | - 16 V, 20 V | 1.1 V | 125 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIDR610DP-T1-GE3 TTI: SIDR610DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds -/+20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 39.6 A | 31.9 mOhms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR167DP-T1-GE3 TTI: SIR167DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | - 25 V, 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIDR626DP-T1-GE3 TTI: SIDR626DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.7 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISS04DN-T1-GE3 TTI: SISS04DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 16V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 80 A | 1.2 mOhms | - 12 V, 16 V | 1 V | 93 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR180DP-T1-RE3 TTI: SIR180DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 60 A | 2.05 mOhms | - 20 V, 20 V | 2 V | 87 nC | - 55 C | + 150 C | 83.3 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRF710PBF | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 24.7 A | 25.5 mOhms | - 20 V, 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | - 25 V, 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | ||||
Mfr: SI2302CDS-T1-BE3 TTI: SI2302CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P CHAN 20V | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | TrenchFET | Reel | SI2302CDS-T1-GE3 | |||
Mfr: SI2323CDS-T1-BE3 TTI: SI2323CDS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT23 P CHAN 20V | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 39 mOhms | - 8 V, 8 V | 1 V | 9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2323CDS-T1-GE3 | ||||
Mfr: SI1967DH-T1-E3 TTI: SI1967DH-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 400 mV | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1967DH-E3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 2.9 A | 57 mOhms | - 8 V, 8 V | 850 mV | 3.5 nC | - 55 C | + 150 C | 860 mW | Enhancement | Reel | SI2302DDS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBG20PBF |