Vishay / Siliconix - MOSFETs
4,711 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SIHA5N80AE-GE3 TTI: SIHA5N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 3A E SERIES | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 3 A | 1.35 Ohms | - 30 V, 30 V | 4 V | 11 nC | - 55 C | + 150 C | 29 W | Enhancement | Reel | |||||
Mfr: IRFZ44RPBF-BE3 TTI: IRFZ44RPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ44RPBF | ||||
Mfr: SIRA54DP-T1-GE3 TTI: SIRA54DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.35 mOhms | - 16 V, 20 V | 1.1 V | 104 nC | - 55 C | + 150 C | 36.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS4402DN-T1-GE3 TTI: SISS4402DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 100 V (D-S) MOSFET SO-8, 9.3 mohm a. 10V, 10.3 mohm a. 4.5V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8S | N-Channel | 1 Channel | 40 V | 128 A | 2.2 mOhms | - 16 V, 20 V | 2.5 V | 46.7 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | |||||
Mfr: SIHP065N60E-BE3 TTI: SIHP065N60E-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 600V 40A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 57 mOhms | - 30 V, 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | SIHP065N60E-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 178.3 A | 1.38 mOhms | - 16 V, 20 V | 1 V | 57 nC | - 55 C | + 150 C | 65.8 W | Enhancement | PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 18.7 A | 11.3 mOhms | - 20 V, 20 V | 4 V | 42 nC | - 55 C | + 150 C | 7.4 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHH080N60E-T1-GE3 TTI: SIHH080N60E-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs PWRPK 600V 32A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK 8x8-4 | N-Channel | 1 Channel | 600 V | 32 A | 80 mOhms | - 30 V, 30 V | 5 V | 42 nC | - 55 C | + 150 C | 184 W | Enhancement | Reel | |||||
Mfr: SIHF074N65E-GE3 TTI: SIHF074N65E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 700V TO220FP | 0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 650 V | 14 A | 70 mOhms | - 30 V, 30 V | 5 V | 53 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
Mfr: SIRA06DDP-T1-UE3 TTI: SIRA06DDP-T1-UE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 30-V (D-S) MOSFET | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 30 V | 125 A | 2.2 mOhms | - 16 V, 20 V | 2.2 V | 31 nC | - 55 C | + 150 C | 59 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247AC-3 | Reel | ||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | Reel | ||||||||||||||||||
Mfr: SIHA12N50E-E3 TTI: SIHA12N50E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 500V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 550 V | 10.5 A | 380 mOhms | - 30 V, 30 V | 4 V | 25 nC | - 55 C | + 150 C | 32 W | Enhancement | Reel | |||||
Mfr: SIHB12N60E-GE3 TTI: SIHB12N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | |||||
Mfr: IRLZ14PBF-BE3 TTI: IRLZ14PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 10 V, 10 V | 2 V | 8.4 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRLZ14PBF | ||||
Mfr: SISH103DN-T1-GE3 TTI: SISH103DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs P-CH SINGLE -30V PPAK1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-8 | P-Channel | 1 Channel | 30 V | 54 A | 8.9 mOhms | - 25 V, 25 V | 2.5 V | 48 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | |||||
Mfr: SIJ4406DP-T1-GE3 TTI: SIJ4406DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 40V PPAK SO-8L | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 40 V | 78 A | 4.75 mOhms | - 20 V, 20 V | 2.4 V | 23.7 nC | - 55 C | + 150 C | 41.6 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 64 A | 47 mOhms | - 30 V, 30 V | 4 V | 239 nC | - 55 C | + 150 C | 520 W | Enhancement | Reel | ||||||
Mfr: SIR638DP-T1-GE3 TTI: SIR638DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 100 A | 880 uOhms | - 16 V, 20 V | 2.3 V | 204 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHF085N60EF-GE3 TTI: SIHF085N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs EF Series Power MOSFET TO-220 FULLPAK, 84 mohm a. 10V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 22 A | 158 mOhms | - 30 V, 30 V | 5 V | 24 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SISA10BDN-T1-GE3 TTI: SISA10BDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 30 V | 26 A | 3.6 mOhms | - 16 V, 20 V | 2.4 V | 24.1 nC | - 55 C | + 150 C | 3.8 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 73 A | 39 mOhms | - 30 V, 30 V | 4 V | 241 nC | - 55 C | + 150 C | 520 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 250 V | 4.1 A | 150 mOhms | - 20 V, 20 V | 2 V | 10.9 nC | - 55 C | + 150 C | 6 W | Enhancement | Reel | ||||||
Mfr: SIHA105N60EF-GE3 TTI: SIHA105N60EF-GE3 Vishay / Siliconix MOSFETs E Series Pwr MOSFET w/Fast Body Diode | 0In Stock | Si | Through Hole | N-Channel | 1 Channel | 600 V | 29 A | 100 mOhms | - 30 V, 30 V | 5 V | 35 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | - 20 V, 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | Reel | SI2306BDS-T1-E3 |