IXYS - MOSFETs
2,313 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 550 V | 22 A | 270 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 80 A | 28 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 360 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 70 V | 110 A | 6 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 500 W | Enhancement | HyperFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 55 A | 85 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 560 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | PLUS-220-3 | N-Channel | 1 Channel | 600 V | 18 A | 400 mOhms | - 30 V, 30 V | 5.5 V | 50 nC | - 55 C | + 150 C | 360 W | Enhancement | PolarHV, HiPerFET | Tube | ||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 20 A | 350 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.8 A | 1.4 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 89 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-204AE-3 | N-Channel | 1 Channel | 500 V | 13 A | 400 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | HiPerFET | Tube | ||||||
Mfr: IXFR30N110P TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 30 Amps 1100V 0.4000 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.1 kV | 16 A | 400 mOhms | - 30 V, 30 V | - 55 C | + 150 C | 320 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 12 A | 85 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 33 W | Tube | ||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 15 A | 600 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 60 A | 33 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 275 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 150 V | 90 A | 20 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 455 W | Enhancement | Box | |||||||
Mfr: IXTK110N30 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 110 Amps 300V 0.026 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 110 A | 26 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 730 W | Enhancement | Tube | ||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 200 V | 15 A | 180 Ohms | Tube | |||||||||||||
Not Available Online | Si | SMD/SMT | DPAK-3 (TO-252-3) | 150 V | 24 A | 100 Ohms | Bulk | ||||||||||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 700 V | 2 A | 850 mOhms | - 30 V, 30 V | 2.5 V | 11.8 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1.1 kV | 3 A | 4 Ohms | - 20 V, 20 V | 2.5 V | 39 nC | - 55 C | + 150 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 250 V | 76 A | 42 mOhms | - 20 V, 20 V | 3 V | 92 nC | - 55 C | + 150 C | 460 W | Enhancement | Trench | Reel | ||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | 3 V | 47 nC | - 55 C | + 150 C | 300 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 100 A | 7 mOhms | - 20 V, 20 V | 2 V | 25.5 nC | - 55 C | + 175 C | 150 W | Enhancement | TrenchT2 | Reel |
