IXYS - MOSFETs
2,314 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Not Available Online | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 150 V | 130 A | 8 mOhms | - 20 V, 20 V | 2.5 V | 87 nC | - 55 C | + 150 C | 400 W | Enhancement | HiPerFET | Tube | ||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | ||||||||||||||||||||
Not Available Online | Si | ||||||||||||||||||||
0In Stock | Si | Through Hole | ISOPLUS-i4-PAK-3 | BIMOSFET | Tube | ||||||||||||||||
Not Available Online | Si | Through Hole | ISOPLUS i5-PAC-3 | BIMOSFET | Tube | ||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 18 A | 230 mOhms | - 30 V, 30 V | 2.5 V | 35 nC | - 55 C | + 150 C | 320 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | - 20 V, 20 V | 2.5 V | 30 nC | - 55 C | + 150 C | 347 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 600 V | 50 A | 73 mOhms | - 30 V, 30 V | 2.5 V | 116 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | HiPerFET | Tube | ||||||||||||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 80 V | 80 A | 9 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | HiPerFET | Tube | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 24 A | 390 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 560 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 55 V | 200 A | 5.1 mOhms | - 20 V, 20 V | - 55 C | + 175 C | 300 W | Enhancement | Tube | |||||||
Not Available Online | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 200 mA | 30 Ohms | - 20 V, 20 V | 5 V | - 55 C | + 150 C | 25 W | Depletion | Tube | ||||||
Not Available Online | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 200 V | 102 A | 23 mOhms | - 30 V, 30 V | - 55 C | + 175 C | 750 W | Enhancement | Tube | |||||||
Not Available Online | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 600 V | 14 A | 250 mOhms | - 20 V, 20 V | 2.5 V | 16.7 nC | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||
0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | - 30 V, 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 3 A | 1.5 Ohms | - 20 V, 20 V | 2 V | 40 nC | - 55 C | + 150 C | 125 W | Depletion | TrenchHV | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 3.6 A | 3.4 Ohms | - 30 V, 30 V | 3 V | 14.2 nC | - 55 C | + 150 C | 100 W | Enhancement | Polar | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 150 V | 62 A | 40 mOhms | - 20 V, 20 V | 3 V | 70 nC | - 55 C | + 175 C | 350 W | Enhancement | PolarHT | Reel | ||||
Not Available Online | Si | Through Hole | ISOPLUS-i4-PAK-3 | N-Channel | 3 kV | 1.6 A | 21 Ohms | - 20 V, 20 V | 3 V | - 55 C | + 150 C | 160 W | Polar3 | Tube | |||||||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 6 A | 1.4 Ohms | - 20 V, 20 V | - 55 C | + 150 C | 180 W | Enhancement | Tube | |||||||
Mfr: IXFR180N085 TTI: Not Assigned IXYS Availability: Not Available OnlineMOSFETs 180 Amps 85V 0.007 Rds | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 85 V | 180 A | 7 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 400 W | Enhancement | HyperFET | Tube |
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