Featuring new Super Junction Technology, Vishay’s new E Series of 600 V and 650 V n-channel power MOSFETs achieve new levels of efficiency and power density, while offering lower input capacitance and increased switching speeds over a wide range of current ratings. The MOSFETs provide ultra-low maximum on-resistance from 64 mΩ to 190 mΩ at 10 V, which is 30 % lower than previous-generation S Series devices for the same die size. This low on-resistance translates into extremely low conduction losses to save energy in high-power, high-performance switch mode applications. Available in the TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages, the E Series offers ultra-low gate charge and low gate charge times on-resistance FOM for power conversion applications.
Vishay E-Series MOSFETs
Features
- Ultra-low maximum on resistance from 64 mΩ to 190 mΩ at 10 V
- Low gate charge and gate charge times on-resistance FOM
- Wide range of current ratings from 22 A to 47 A
- E Series Super Junction Technology
- Offered in TO-220, TO-220 FullPAK, TO-247, and TO-263 (D2PAK) packages
- Withstand high energy pulse in the avalanche and commutation mode
- Compliant to RoHS Directive 2002/95/EC
- Avalanche (UIS) rated for reliable operation
Applications
- Switch mode applications
- Power factor correction
- Server and telecom power systems
- Welding
- Plasma cutting
- Battery chargers
- High-intensity discharge (HID) lighting
- Fluorescent ballast lighting
- Semiconductor capital equipment
- Solar inverters
- Induction heating.
- Power factor correction
Resources
- Datasheets (PDF)
- Product Offering (PDF)