The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation. In addition, unlike Si-based fast recovery diodes where the trr increases along with temperature, Silicon carbide (SiC) devices maintain constant characteristics, resulting in better performance.
Rohm Semiconductor SiC Schottky Barrier Diodes
Features
- Short recovery time
- Reduced temperature dependence
- High speed switching
Resources
- Catalog (PDF)