ROHM’s 1700 Volt SCT2H12NZ MOSFET provides the high breakdown voltage required for auxiliary power supplies in industrial equipment. Conduction loss is reduced by 8X over conventional silicon MOSFETs, contributing to greater energy efficiency. This allows for smaller board-level components to be used, leading to increased miniaturization.
Silicon Carbide (SiC) features much lower ON resistance than silicon, enabling high efficiency operation and less heat generation. Look for the new surface mount TO-268-2L ROHM MOSFET to be released soon.