H-41 - MOSFETs
2 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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Mfr: SISH410DN-T1-GE3 TTI: SISH410DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds; +/-20V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 41 A | 72 mOhms | - 20 V, 20 V | - 55 C | + 150 C | 300 W | Enhancement | Tube |