SiC MOSFETs
265 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: MXP120A063SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | |||||
0In Stock | SMD/SMT | HiPerFET | |||||||||||||||||
Mfr: IXSJ80N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | Through Hole | TO-247-3L | 1 Channel | 1.2 kV | 85 A | 22.5 mOhms | - 4 V, + 21 V | 4.8 V | 154 nC | - 40 C | + 150 C | 266 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
0In Stock | SMD/SMT | TOLL-8 | 1 Channel | 650 V | 43 A | 78 mOhms | - 5 V, 20 V | 4.5 V | 64 nC | - 55 C | + 175 C | 174 W | Enhancement | ||||||
Mfr: IXSA65N120L2-7TR TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 65 A | 53 mOhms | - 5 V, + 20 V | 4.5 V | 110 nC | - 55 C | + 175 C | 417 W | Enhancement | |||||
Mfr: MXPQ120A045SE-1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
Mfr: MXP120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 40 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | Enhancement | ||||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 67 A | 46 mOhms | - 5 V, + 20 V | 4 V | 83 nC | - 55 C | + 175 C | 288 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 46 A | 4.8 V | 72 nC | + 175 C | 164 W | Enhancement | |||||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 20 A | 208 mOhms | - 5 V, 20 V | 4.5 V | 29 nC | - 55 C | + 175 C | 136 W | Enhancement | ||||||
Mfr: IXSG110N65L2K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL | 0In Stock | SMD/SMT | TOLL-8 | 1 Channel | 650 V | 111 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 600 W | Enhancement | |||||
Mfr: SCT3080KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs N-Ch 1200V SiC 31A 80mOhm TrenchMOS | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 31 A | 104 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3080KL | ||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
Mfr: MXPQ120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-4 | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 83 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
0In Stock | Through Hole | TO-247AD-4L | 1 Channel | 750 V | 51 A | 50 mOhms | - 10 V, + 22 V | 2.65 V | 77 nC | - 55 C | + 175 C | 208 W | Enhancement | ||||||
Mfr: SCT2280KEC TTI: SCT2280KEC ROHM Semiconductor Availability: Not Available OnlineSiC MOSFETs MOSFET1200V14A280m OhmSiliconCarbideSiC | Not Available Online | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 14 A | 280 mOhms | - 6 V, + 22 V | 1.6 V | 36 nC | - 55 C | + 175 C | 108 W | Enhancement | SCT2280KE | ||||
Mfr: MXP120A250FW-GE3 TTI: MXP120A250FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A080FL-GE3 TTI: MXP120A080FL-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | 0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Mfr: MXP120A080FW-GE3 TTI: MXP120A080FW-GE3 Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL (SIC) MOSFET | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 29 A | 100 mOhms | - 10 V, + 22 V | 2.69 V | 47.3 nC | - 55 C | + 150 C | 139 W | Enhancement | MaxSIC | ||||
Not Available Online | Screw Mount | SOT-227B-4 | 1 Channel | 1.7 kV | 90 A | 35 mOhms | - 20 V, + 20 V | 2 V | 376 nC | - 55 C | + 150 C | Enhancement |
