SiC MOSFETs
265 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
Mfr: SCT3022KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs Nch 1200V 95A SiC TO-247N | 0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 95 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | SCT3022KL | ||||
Mfr: IXSH40N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KRHR | ||||||
Mfr: SCT2H12NZGC11 TTI: Not Assigned ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC | 0In Stock | Through Hole | TO-3PFM-3 | 1 Channel | 1.7 kV | 3.7 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 35 W | Enhancement | SCT2H12NZ | ||||
Mfr: MXP120A045SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | SCT3060AL | ||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 1.2 kV | 75 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | Enhancement | ||||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7LA | 1 Channel | 750 V | 22 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSJ25N120R1 TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L | 0In Stock | Through Hole | TO-247-3L | 1 Channel | 1.2 kV | 28 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 52 nC | - 40 C | + 150 C | 75.3 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 51 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 150 W | Enhancement | |||||||
0In Stock | SMD/SMT | D2PAK-7 (TO-263-7) | 1 Channel | 1.7 kV | 6.4 A | 750 mOhms | - 20 V, + 20 V | 1.8 V | 11 nC | - 55 C | + 175 C | 65 W | Enhancement | ||||||
Mfr: SCT2080KEHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 40A 262W SIC 80mOhm TO-247N | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 40 A | 80 mOhms | - 6 V, + 22 V | 1.6 V | 106 nC | - 55 C | + 175 C | 262 W | Enhancement | AEC-Q101 | SCT2080KEHR | |||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 105 A | 16.9 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | Enhancement | AEC-Q101 | |||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | |||||||
Mfr: SCT3022ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 93A 22mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 93 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 133 nC | - 55 C | + 175 C | 339 W | Enhancement | SCT3022AL | ||||
Mfr: IXSJ80N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | Through Hole | ISO247-4 | 1 Channel | 1.2 kV | 85 A | 23.4 mOhms | 21 V | 4.8 V | 155 nC | - 40 C | + 150 C | 223.2 W | Enhancement | |||||
Mfr: SCT3080KLHRC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs 1200V 31A 165W SIC 80mOhm TO-247N | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 2.7 V | 60 nC | - 55 C | + 175 C | 165 W | Enhancement | AEC-Q101 | SCT3080KLHR | |||
Mfr: SCT3030ALGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs N-Ch 650V SiC 70A 30mOhm TrenchMOS | 0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 70 A | 39 mOhms | - 4 V, + 22 V | 5.6 V | 104 nC | - 55 C | + 175 C | 262 W | Enhancement | SCT3030AL | ||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | - 40 C | + 175 C | 136 W | Enhancement | AEC-Q101 | |||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 102 A | 27.3 mOhms | - 5 V, + 20 V | 4 V | 130 nC | - 55 C | + 175 C | 405 W | Enhancement | ||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 17 A | 208 mOhms | - 4 V, + 22 V | 5.6 V | 42 nC | + 175 C | 100 W | Enhancement | SCT3160KW7 |