SiC MOSFETs
250 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
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Mfr: SCT2H12NZGC11 TTI: Not Assigned ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC | 0In Stock | ROHM Semiconductor | Through Hole | TO-3PFM-3 | N-Channel | 1 Channel | 1.7 kV | 3.7 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 35 W | Enhancement | SCT2H12NZ | ||||
Mfr: SCT3022KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs Nch 1200V 95A SiC TO-247N | 0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 95 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | SCT3022KL | ||||
Mfr: MXP120A045SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | Vishay | SMD/SMT | TO-263-7L | N-Channel | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||||
Not Available Online | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 39 A | 60 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | - 55 C | + 175 C | 165 W | Enhancement | SCT3060AR | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 81 A | 23.4 mOhms | - 4 V, + 21 V | 4.8 V | 170 nC | + 175 C | 312 W | Enhancement | SCT4018KR | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
Mfr: IXSJ43N120R1K TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L | 0In Stock | IXYS | Through Hole | ISO247-4 | N-Channel | 1 Channel | 1.2 kV | 46 A | 47 mOhms | 21 V | 4.8 V | 79 nC | - 40 C | + 150 C | 143.7 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | AEC-Q101 | ||||||
0In Stock | IXYS | Through Hole | TO-247-4 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | IXYS | SMD/SMT | TTOLL-8 | N-Channel | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7 | N-Channel | 1 Channel | 750 V | 31 A | 45 mOhms | - 4 V, + 21 V | 4.8 V | 63 nC | + 175 C | 93 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 40 A | 80 mOhms | - 6 V, + 22 V | 4 V | 106 nC | + 175 C | 262 W | Enhancement | SCT2080KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 80 mOhms | - 4 V, + 22 V | 5.6 V | 60 nC | + 175 C | 165 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-9 | N Channel | 1 Channel | 750 V | 26 A | 4.8 V | 48 nC | + 175 V | 100 W | Enhancement | |||||||||
Mfr: MXP120A080SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 31 A | 100 mOhms | - 10 V, 22 V | 2.9 V | 45 nC | - 55 C | + 175 C | 174 W | Enhancement | |||||
Mfr: MXPQ120A063SL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Vishay | Through Hole | TO-247AD-4 | N-Channel | 1 Channel | 1.2 kV | 39 A | 79 mOhms | - 10 V, 22 V | 2.9 V | 61 nC | - 55 C | + 175 C | 205 W | Enhancement | |||||
0In Stock | ROHM Semiconductor | SMD/SMT | TO-263-7LA | N-Channel | 1 Channel | 1.2 kV | 17 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 71 W | Enhancement | |||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-9 | N Channel | 1 Channel | 750 V | 120 A | 4.8 V | 170 nC | + 175 V | 405 W | Enhancement | |||||||||
0In Stock | ROHM Semiconductor | SMD/SMT | TOLL-9 | N Channel | 1 Channel | 750 V | 37 A | 4.8 V | 63 nC | + 175 V | 133 W | Enhancement | |||||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247N-3 | N-Channel | 1 Channel | 1.2 kV | 22 A | 208 mOhms | - 6 V, + 22 V | 4 V | 62 nC | + 175 C | 165 W | Enhancement | SCT2160KE | ||||||
0In Stock | ROHM Semiconductor | Through Hole | TO-247-4L | N-Channel | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement |
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