SiC MOSFETs
265 ResultsPart | Availability | Purchasing | RoHS/Lead | Mounting Style | Package / Case | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | SMD/SMT | TO-263CA-7 | 1 Channel | 1.7 kV | 3.9 A | 1.5 Ohms | - 6 V to + 22 V | 4 V | 24 nC | + 175 C | 39 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 12 A | 313 mOhms | - 10 V, + 22 V | 3 V | 15 nC | - 55 C | + 175 C | 85 W | Enhancement | ||||||
Mfr: MXP120A045SW-GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | Through Hole | TO-247AD-3 | 1 Channel | 1.2 kV | 51 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 84 nC | - 55 C | + 175 C | 254 W | Enhancement | |||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 10 A | 585 mOhms | - 6 V, + 22 V | 4 V | 27 nC | + 175 C | 85 W | Enhancement | SCT2450KE | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KE | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 750 V | 56 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 176 W | Enhancement | SCT4026DRHR | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 25 A | 85 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | AEC-Q101 | ||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 32 A | 65 mOhms | - 4 V, + 21 V | 4.8 V | 71 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 750 V | 51 A | 26 mOhms | - 4 V, + 21 V | 4.8 V | 94 nC | + 175 C | 150 W | Enhancement | |||||||
Mfr: IXSA80N120L2-7TR TTI: Not Assigned IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L | 0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 79 A | 39 mOhms | - 5 V, + 20 V | 4.5 V | 135 nC | - 55 C | + 175 C | 395 W | Enhancement | |||||
0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 80 A | 4.8 V | 123 nC | + 175 V | 277 W | Enhancement | |||||||||
0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 650 V | 60 A | 53 mOhms | - 5 V, 20 V | 4.5 V | 94.7 nC | - 55 C | + 175 C | 249 W | Enhancement | ||||||
Mfr: SCT3022KLGC11 TTI: Not Assigned ROHM Semiconductor Availability: 0In StockSiC MOSFETs Nch 1200V 95A SiC TO-247N | 0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 95 A | 28.6 mOhms | - 4 V, + 22 V | 5.6 V | 178 nC | - 55 C | + 175 C | 427 W | Enhancement | SCT3022KL | ||||
Mfr: IXSH40N120L2KHV TTI: Not Assigned IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 41 A | 104 mOhms | - 5 V, + 20 V | 4.5 V | 53 nC | - 55 C | + 175 C | 250 W | Enhancement | |||||
0In Stock | SMD/SMT | TO-263-7L | 1 Channel | 1.2 kV | 41 A | 79 mOhms | - 10 V, + 22 V | 2.9 V | 58 nC | - 55 C | + 175 C | 221 W | Enhancement | ||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 26 A | 81 mOhms | - 4 V, + 21 V | 4.8 V | 64 nC | + 175 C | 115 W | Enhancement | SCT4062KRHR | ||||||
Mfr: SCT2H12NZGC11 TTI: Not Assigned ROHM Semiconductor SiC MOSFETs 1700V 3.7A N-MOSFET Silicon Carbide SiC | 0In Stock | Through Hole | TO-3PFM-3 | 1 Channel | 1.7 kV | 3.7 A | 1.5 Ohms | - 6 V, + 22 V | 4 V | 14 nC | - 55 C | + 175 C | 35 W | Enhancement | SCT2H12NZ | ||||
Mfr: MXP120A045SE-T1GE3 TTI: Not Assigned Vishay Semiconductors Availability: 0In StockSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | 0In Stock | SMD/SMT | TO-263-7 | 1 Channel | 1.2 kV | 52 A | 56 mOhms | - 10 V, 22 V | 2.8 V | 82 nC | - 55 C | + 175 C | 268 W | Enhancement | |||||
0In Stock | Through Hole | TO-247-3 | 1 Channel | 650 V | 39 A | 78 mOhms | - 4 V, + 22 V | 5.6 V | 58 nC | + 175 C | 165 W | Enhancement | SCT3060AL | ||||||
Mfr: IXSH100N65L2KHV TTI: Not Assigned IXYS Availability: 0In StockSiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L | 0In Stock | Through Hole | TO-247-4L | 1 Channel | 650 V | 99 A | 33 mOhms | - 5 V, + 20 V | 4.5 V | 125 nC | - 55 C | + 175 C | 454 W | Enhancement | |||||
0In Stock | SMD/SMT | TOLL-9 | 1 Channel | 750 V | 120 A | 4.8 V | 170 nC | + 175 V | 405 W | Enhancement | |||||||||
0In Stock | Through Hole | TO-247-4L | 1 Channel | 1.2 kV | 19 A | 117 mOhms | - 4 V, + 21 V | 4.8 V | 48 nC | + 175 C | 88 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247-4 | 1 Channel | 1.2 kV | 43 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 91 nC | + 175 C | 176 W | Enhancement | SCT4036KR | ||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 750 V | 42 A | 47 mOhms | - 4 V, + 21 V | 4.8 V | 72 nC | + 175 C | 136 W | Enhancement | |||||||
0In Stock | Through Hole | TO-247N-3 | 1 Channel | 1.2 kV | 22 A | 208 mOhms | - 6 V, + 22 V | 4 V | 62 nC | + 175 C | 165 W | Enhancement | SCT2160KE |