Vishay - SiC MOSFETs
27 ResultsPart | Availability | Purchasing | RoHS/Lead | Manufacturer | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename |
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Mfr: MXP120A250FL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 10.5 A | 313 mOhms | - 10 V, + 22 V | 3.1 V | 20.3 nC | - 55 C | + 150 C | 56 W | Enhancement | MaxSIC | |||
Mfr: MXP120A045FL-GE3 TTI: Not Assigned Vishay Semiconductors Availability: Not Available OnlineSiC MOSFETs 1200-V N-CHANNEL SIC MOSFET | Not Available Online | Vishay | Through Hole | TO-247-4 | N-Channel | 1 Channel | 1.2 kV | 49 A | 56 mOhms | - 10 V, + 22 V | 2.38 V | 75.6 nC | - 55 C | + 150 C | 227 W | Enhancement | MaxSIC |
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