MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 5.2 A | 42 mOhms | - 8 V, 8 V | 1 V | 10 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2336DS-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 80.3 A | 4.4 mOhms | - 20 V, 20 V | 2.5 V | 31.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Not Available Online | Si | SMD/SMT | SOT-89-3 | P-Channel | 1 Channel | 30 V | 4.1 A | 50 mOhms | - 20 V, 20 V | 3 V | 6.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 8.5 A | 22 mOhms | - 20 V, 20 V | 1 V | 27 nC | - 55 C | + 175 C | 3.3 W | Enhancement | TrenchFET | Reel | SI4850EY-E3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
Mfr: IRFR9220TRPBF TTI: IRFR9220TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs 200V P-CH HEXFET MOSFET D | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | - 20 V, 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | ||||||
Mfr: IRFRC20PBF TTI: IRFRC20PBF Vishay Semiconductors Availability: 6,000In Stock6,000 On Order Expected 26-Aug-26 MOSFETs N-CH SINGLE 600V TO252 | 6,000In Stock6,000 On Order Expected 26-Aug-26 | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | - 20 V, 20 V | 2 V | 8.3 nC | - 55 C | + 175 C | 43 W | Enhancement | Tube | IRF510PBF | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | - 8 V, 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | ||||
Mfr: SI2324DS-T1-GE3 TTI: SI2324DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 234 mOhms | - 20 V, 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2324DS-T1-BE3 | |||
Mfr: RZM001P02T2L TTI: RZM001P02T2L ROHM Semiconductor Availability: 0In StockMOSFETs 1.2V Drive Pch MOSFET | 0In Stock | Si | SMD/SMT | SOT-723-3 | P-Channel | 1 Channel | 20 V | 100 mA | 3.8 Ohms | - 10 V, 10 V | 1 V | - 55 C | + 150 C | 150 mW | Enhancement | Reel | RZM001P02 | |||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 650 V | 4 A | 850 mOhms | - 30 V, 30 V | 3 V | 8.3 nC | - 55 C | + 150 C | 80 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIS402DN-T1-GE3 TTI: SIS402DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 35 A | 6 mOhms | - 20 V, 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIJ484DP-T1-GE3 | |||
Mfr: SI4431CDY-T1-E3 TTI: SI4431CDY-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | - 20 V, 20 V | 2.5 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-E3 | |||
Mfr: SI7611DN-T1-GE3 TTI: SI7611DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 40 V | 18 A | 25 mOhms | - 20 V, 20 V | 1 V | 41 nC | - 50 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | SI7611DN-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 150 V | 36 A | 110 mOhms | - 20 V, 20 V | 4.5 V | 55 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarP | Tube | |||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | ||||
Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors MOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | - 20 V, 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 | |||
Mfr: SIA483DJ-T1-GE3 TTI: SIA483DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 30 V | 12 A | 16 mOhms | - 20 V, 20 V | 2.2 V | 45 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS40DN-T1-GE3 TTI: SISS40DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 36.5 A | 21 mOhms | - 20 V, 20 V | 2.3 V | 24 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI3443DDV-T1-GE3 TTI: SI3443DDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | - 12 V, 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3443DDV-T1-BE3 | |||
Mfr: SUM50010E-GE3 TTI: SUM50010E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds; 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 150 A | 1.75 mOhms | - 20 V, 20 V | 2 V | 212 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel |