NC - MOSFETs
5,620 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB5N80AE-GE3 TTI: SIHB5N80AE-GE3 Vishay Availability: 0In StockMOSFETs TO263 800V 4.4A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SISS4410DN-T1-GE3 TTI: SISS4410DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 40V PPAK1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-8 | N-Channel | 1 Channel | 40 V | 36 A | 9 mOhms | - 16 V, 20 V | 2.4 V | 5.3 nC | - 55 C | + 150 C | 19.8 W | Enhancement | Reel | |||||
Mfr: SIHB33N60ET1-GE3 TTI: SIHB33N60ET1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Channel 600V | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 98 mOhms | - 30 V, 30 V | 4 V | 103 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIR5712DP-T1-GE3 TTI: SIR5712DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK SO-8 | 0In Stock | Si | SMD/SMT | SO-8 | N-Channel | 1 Channel | 150 V | 18 A | 55.5 mOhms | - 20 V, 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
Mfr: IRFI720GPBF TTI: IRFI720GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 400V 2.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2.6 A | 1.8 Ohms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: IRFI620GPBF TTI: IRFI620GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 4.1A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 4.1 A | 800 mOhms | - 20 V, 20 V | 2 V | 14 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: IRFIZ48GPBF TTI: IRFIZ48GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 N CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 37 A | 18 mOhms | - 20 V, 20 V | 2 V | 110 nC | - 55 C | + 175 C | 50 W | Enhancement | Reel | |||||
Mfr: IRFBC20PBF TTI: IRFBC20PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 600V 2.2A N-CH | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 2.2 A | 4.4 Ohms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRFBC20PBF-BE3 | ||||
Mfr: IRFBF20PBF TTI: IRFBF20PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 1.7A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.7 A | 8 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBF20PBF-BE3 | ||||
0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 30 V, 30 V | 2 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | ||||||
Mfr: IRFI640GPBF TTI: IRFI640GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 200V 9.8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 9.8 A | 180 mOhms | - 20 V, 20 V | 2 V | 70 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 4.6 A | 850 mOhms | - 20 V, 20 V | 2 V | 67 nC | - 55 C | + 150 C | 40 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.9 A | 400 mOhms | - 20 V, 20 V | 2 V | 43 nC | - 55 C | + 150 C | 32 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 4 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF840APBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 2 A | 3.6 Ohms | - 20 V, 20 V | 4 V | 17 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | IRF710PBF | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 8 V | 6 A | 17 mOhms | - 5 V, 5 V | 800 mV | 6 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2342DS-T1-GE3 | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 5.4 A | 820 mOhms | - 30 V, 30 V | 4 V | 44 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHP6N80E-GE3 | |||||
0In Stock | Si | Reel | ||||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 60 V | 52.1 A | 10 mOhms | - 20 V, 20 V | 4 V | 19.1 nC | - 55 C | + 150 C | 59.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 60 V | 45.9 A | 8.9 mOhms | - 20 V, 20 V | 3 V | 18.3 nC | - 55 C | + 150 C | 33.7 W | Enhancement | Reel | ||||||
Mfr: CPC3981ZTR TTI: CPC3981ZTR IXYS Availability: 0In StockMOSFETs N-CH DEP MOSFET 800V 45 Oh SOT-223-2L TR | 0In Stock | Si | SMD/SMT | SOT-223-2 | N-Channel | 1 Channel | 800 V | 100 mA | 32.5 Ohms | - 15 V, 15 V | - 55 C | + 150 C | 2.25 W | Depletion | Reel | |||||||
Mfr: SI4456DY-T1-E3 TTI: SI4456DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V 33A 7.8W 3.8mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 40 V | 33 A | 3.8 mOhms | - 20 V, 20 V | 1.5 V | 122 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4456DY-E3 | |||
Mfr: SIHG70N60EF-GE3 TTI: SIHG70N60EF-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIHW | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 70 A | 38 mOhms | - 30 V, 30 V | 2 V | 380 nC | - 55 C | + 150 C | 520 W | Enhancement | Reel | |||||
Mfr: SIR698DP-T1-GE3 TTI: SIR698DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 7.5 A | 195 mOhms | - 20 V, 20 V | 2.5 V | 8 nC | - 55 C | + 150 C | 23 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR698DP-GE3 | |||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 |