MOSFETs
13,171 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA456DJ-T1-GE3 TTI: SIA456DJ-T1-GE3 Vishay Semiconductors Availability: 0In Stock3,000 On Order Expected 14-May-27 MOSFETs 200V Vds 16V Vgs PowerPAK SC-70 | 0In Stock3,000 On Order Expected 14-May-27 | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.38 Ohms | 16 V | 600 mV | 5 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA456DJ-GE3 | |||
Mfr: SI4943CDY-T1-GE3 TTI: SI4943CDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock10,000 On Order Expected 05-Nov-27 MOSFETs -20V Vds 20V Vgs SO-8 | 0In Stock10,000 On Order Expected 05-Nov-27 | Si | SMD/SMT | SOIC-8 | P-Channel | 2 Channel | 20 V | 8 A | 19.2 mOhms | 20 V | 3 V | 62 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI4943CDY-GE3 | |||
Mfr: SI2309CDS-T1-GE3 TTI: SI2309CDS-T1-GE3 Vishay Semiconductors Availability: 0In Stock27,000 On Order Expected 16-Sep-27 MOSFETs -60V Vds 20V Vgs SOT-23 | 0In Stock27,000 On Order Expected 16-Sep-27 | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 60 V | 1.6 A | 345 mOhms | 20 V | 3 V | 2.7 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2309CDS-T1-BE3 SI2309CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.6 A | 29 mOhms | 20 V | 2.5 V | 11.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2369DS-T1-BE3 | ||||
Mfr: SI4946CDY-T1-GE3 TTI: SI4946CDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 60 V | 6.1 A | 51.6 mOhms | 20 V | 3 V | 2.4 nC | - 55 C | + 150 C | 2.8 W | Enhancement | Reel | |||||
Mfr: SUD50P10-43L-E3 TTI: SUD50P10-43L-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V 37A 136W 43mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 100 V | 37.1 A | 43 mOhms | 20 V | 1 V | 106 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | SUD50P10-43L-BE3 | |||
Mfr: SI4431CDY-T1-GE3 TTI: SI4431CDY-T1-GE3 Vishay Semiconductors Availability: 0In Stock5,000 On Order Expected 23-Nov-28 MOSFETs -30V Vds 20V Vgs SO-8 | 0In Stock5,000 On Order Expected 23-Nov-28 | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 9 A | 32 mOhms | 20 V | 1 V | 38 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI4431CDY-GE3 | |||
Mfr: SI7613DN-T1-GE3 TTI: SI7613DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs -20V Vds 16V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 14 mOhms | 16 V | 2.2 V | 87 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7613DN-GE3 | |||
3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 50 V | 15 A | 100 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 40 W | Enhancement | Tube | IRFZ20PBF-BE3 | |||||
Mfr: SISH536DN-T1-GE3 TTI: SISH536DN-T1-GE3 Vishay / Siliconix Availability: 0In Stock126,000 On Order Expected MOSFETs POWRPK N CHAN 30V | 0In Stock126,000 On Order Expected | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 30 V | 67.4 A | 3.25 mOhms | - 12 V, 16 V | 2.2 V | 16.6 nC | - 55 C | + 150 C | 26.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI2307CDS-T1-GE3 TTI: SI2307CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | 20 V | 3 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-GE3 | |||
Mfr: SIB406EDK-T1-GE3 TTI: SIB406EDK-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 20 V | 6 A | 46 mOhms | 12 V | 600 mV | 12 nC | - 55 C | + 150 C | 10 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB406EDK-GE3 | |||
Mfr: SI4936CDY-T1-GE3 TTI: SI4936CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | |||
Mfr: RTF016N05TL TTI: RTF016N05TL ROHM Semiconductor Availability: Not Available OnlineMOSFETs 2.5V Drive Nch MOSFET | Not Available Online | Si | SMD/SMT | SOT-323T-3 | N-Channel | 1 Channel | 45 V | 1.6 A | 190 mOhms | 12 V | 1.5 V | 2.3 nC | - 55 C | + 150 C | 800 mW | Enhancement | Reel | RTF016N05 | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 600 mA | 1 Ohms | 15 V | 3.1 V | - 55 C | + 150 C | 1.1 W | Depletion | Clare | Reel | ||||||
Mfr: SISS05DN-T1-GE3 TTI: SISS05DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs POWRPK P CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 108 A | 5.8 mOhms | - 20 V, 16 V | 2.2 V | 76 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 100 V | 1.5 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL110TRPBF-BE3 | |||||
0In Stock | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 150 V | 180 A | 10 mOhms | 20 V | 5 V | 240 nC | - 55 C | + 175 C | 800 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | IRF530PBF | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 | |||||
Mfr: SI9926CDY-T1-GE3 TTI: SI9926CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 20 V | 8 A | 18 mOhms | 12 V | 600 mV | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI9926CDY-GE3 | |||
Mfr: SIA533EDJ-T1-GE3 TTI: SIA533EDJ-T1-GE3 Vishay Semiconductors MOSFETs -12V Vds 8V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel, P-Channel | 2 Channel | 12 V | 4.5 A | 34 mOhms, 59 mOhms | 8 V | 400 mV | 10 nC, 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA533EDJ-GE3 | |||
Mfr: SI7415DN-T1-GE3 TTI: SI7415DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 5.7 A | 65 mOhms | 20 V | 3 V | 25 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7415DN-GE3 | |||
Mfr: RU1C001UNTCL TTI: RU1C001UNTCL ROHM Semiconductor Availability: Not Available OnlineMOSFETs SOT323 N-CH 20V .1A | Not Available Online | Si | SMD/SMT | SOT-323FL-3 | N-Channel | 1 Channel | 20 V | 100 mA | 3.5 Ohms | 8 V | 1 V | - 55 C | + 150 C | 200 mW | Enhancement | Reel | RU1C001UN |