MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SQ3418AEEV-T1-GE3 TTI: SQ3418AEEV-T1-GE3 Vishay Availability: 51,000In StockMOSFETs N-CHANNEL 40-V (D-S) 175C MOSF | 51,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ956EP-T1-GE3 TTI: SQJ956EP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs DUAL N-CHANNEL 60-V (D-S) 175C | 6,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQ3585EV-T1-GE3 TTI: SQ3585EV-T1-GE3 Vishay Availability: 3,000In StockMOSFETs TSOP6 NPCH 20V 3.57A | 3,000In Stock | Si | SMD/SMT | TSOP-6 | N-Channel, P-Channel | 2 Channel | 20 V | 2.5 A, 3.57 A | 49 mOhms, 140 mOhms | - 12 V, 12 V | 600 mV, 1.5 V | 2.5 nC, 3.5 nC | - 55 C | + 175 C | 1.67 W | Enhancement | Reel | |||||
Mfr: SQJ459EP-T1-GE3 TTI: SQJ459EP-T1-GE3 Vishay / Siliconix Availability: 252,000In StockMOSFETs 60V P-CHANNEL (D-S) | 252,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: RSQ015P10TR TTI: RSQ015P10TR ROHM Semiconductor Availability: 42,000In StockMOSFETs 4V Drive Pch MOSFET | 42,000In Stock | Si | SMD/SMT | SOT-457T-6 | P-Channel | 1 Channel | 100 V | 1.5 A | 470 mOhms | - 20 V, 20 V | 2.5 V | 17 nC | - 55 C | + 150 C | 1.25 W | Enhancement | Reel | RSQ015P10 | ||||
Mfr: SQJ992EP-T1-GE3 TTI: SQJ992EP-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs RECOMMENDED ALT SQJ9 | 9,000In Stock | Si | SMD/SMT | PowerPAK-SO-8L-4 | AEC-Q101 | TrenchFET | Reel | |||||||||||||||
Mfr: SQJ158EP-T1-GE3 TTI: SQJ158EP-T1-GE3 Vishay / Siliconix Availability: 198,000In StockMOSFETs PPAKSO8 N-CH 60V 23A | 198,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQ2389CES-T1-GE3 TTI: SQ2389CES-T1-GE3 Vishay Availability: 75,000In StockMOSFETs SOT23 P CHAN 40V | 75,000In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.1 A | 94 mOhms | - 20 V, 20 V | 2.5 V | 8.2 nC | - 55 C | + 175 C | 3 W | Enhancement | Reel | |||||
Mfr: SI7904BDN-T1-E3 TTI: SI7904BDN-T1-E3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 20V Vds 8V Vgs PowerPAK 1212-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 20 V | 6 A | 30 mOhms | - 8 V, 8 V | 1 V | 16 nC | - 55 C | + 150 C | 17.8 W | Enhancement | TrenchFET | Reel | SI7904BDN-E3 | |||
Mfr: SQD40P10-40L-GE3 TTI: SQD40P10-40L-GE3 Vishay / Siliconix Availability: 10,000In StockMOSFETs RECOMMENDED ALT SQD4 | 10,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | AEC-Q100 | TrenchFET | Reel | |||||||||||||||
Mfr: SI7900AEDN-T1-GE3 TTI: SI7900AEDN-T1-GE3 Vishay Semiconductors Availability: 264,000In StockMOSFETs 20V Vds 12V Vgs PowerPAK 1212-8 | 264,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 2 Channel | 20 V | 8.5 A | 26 mOhms | - 12 V, 12 V | 900 mV | 10.5 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | SI7900AEDN-GE3 | |||
Mfr: SQM50P08-25L/GE3 TTI: SQM50P08-25L/GE3 Vishay / Siliconix Availability: 800In StockMOSFETs P-CH SINGLE -80V TO263 | 800In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQM120P04-04L-GE3 TTI: SQM120P04-04L-GE3 Vishay / Siliconix Availability: 800In StockMOSFETs RECOMMENDED ALT SQM1 | 800In Stock | Si | AEC-Q100 | TrenchFET | Reel | |||||||||||||||||
Mfr: SQJ488EP-T1-GE3 TTI: SQJ488EP-T1-GE3 Vishay / Siliconix Availability: 63,000In StockMOSFETs RECOMMENDED ALT SQJ4 | 63,000In Stock | Si | AEC-Q101 | TrenchFET | Reel | |||||||||||||||||
Mfr: SQA470EJ-T1/GE3 TTI: SQA470EJ-T1/GE3 Vishay Availability: 84,000In StockMOSFETs N-CH DUAL 20V PPAKSC70 | 84,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQD90P04-9M4L/GE3 TTI: SQD90P04-9M4L/GE3 Vishay / Siliconix Availability: 58,000In StockMOSFETs P-CH SINGLE -40V DPAK AECQ | 58,000In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | Reel | |||||||||||||||||
Mfr: SQJ476EP-T1-GE3 TTI: SQJ476EP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs SOT669 100V 23A N-CH MOSFET | 6,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SIHK055N60EF-T1GE3 TTI: SIHK055N60EF-T1GE3 Vishay Availability: 8,000In StockMOSFETs TOLL 600V 40A E SERIES | 8,000In Stock | Si | 650 V | 40 A | 50 mOhms | - 30 V, 30 V | 5 V | 90 nC | - 55 C | + 150 C | 236 W | Reel | ||||||||||
Mfr: SQA401EJ-T1/GE3 TTI: SQA401EJ-T1/GE3 Vishay Availability: 33,000In StockMOSFETs P-CHANNEL 20-V(D-S)175C MOSFET | 33,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SQJ423EP-T1-GE3 TTI: SQJ423EP-T1-GE3 Vishay / Siliconix Availability: 18,000In StockMOSFETs P-CHANNEL 200V 175C (D-S) | 18,000In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI4559ADY-T1-E3 TTI: SI4559ADY-T1-E3 Vishay Semiconductors Availability: 5,000In StockMOSFETs -60V Vds 20V Vgs SO-8 N&P PAIR | 5,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel, P-Channel | 2 Channel | 60 V | 3.9 A, 5.3 A | 58 mOhms, 120 mOhms | - 20 V, 20 V | 1 V | 20 nC, 22 nC | - 55 C | + 150 C | 3.1 W, 3.4 W | Enhancement | TrenchFET | Reel | SI4559ADY-E3 | |||
Mfr: SQ3989EV-T1-GE3 TTI: SQ3989EV-T1-GE3 Vishay Availability: 27,000In StockMOSFETs DUAL P-CHANNEL 30-V (D-S) 175C | 27,000In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 20 V | 6 A | 31.8 mOhms | - 8 V, 8 V | 1 V | 8.8 nC | - 55 C | + 150 C | 2.1 W | Enhancement | TrenchFET | Reel | SI2312CDS-T1-BE3 SI2312CDS-GE3 SI7621DN-T1-GE3 | ||||
Mfr: SI2319CDS-T1-GE3 TTI: SI2319CDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 4.4 A | 77 mOhms | - 20 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2319CDS-T1-BE3 SI2319CDS-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 5.3 A | 39 mOhms | - 8 V, 8 V | 1 V | 13.6 nC | - 55 C | + 150 C | 1.7 W | Enhancement | TrenchFET | Reel | SI2323DDS-T1-BE3 |