MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging |
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0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35.5 mOhms | - 20 V, 20 V | 2 V | 410 nC | - 55 C | + 150 C | 417 W | Enhancement | Reel | |||||
Mfr: SISA01DN-T1-GE3 TTI: SISA01DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 16V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.9 mOhms | - 20 V, 16 V | 2.2 V | 56 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | - 20 V, 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUP50020E-GE3 TTI: SUP50020E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds TrenchFET TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 120 A | 2.4 mOhms | - 20 V, 20 V | 4 V | 128 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||
Mfr: IXFK300N20X3 TTI: IXFK300N20X3 IXYS Availability: Not Available OnlineMOSFETs N-Ch 200V Enh FET 200Vdgr 300A 4mOhm | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 300 A | 4 mOhms | - 20 V, 20 V | 2.5 V | 375 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | |||
Mfr: SI7113ADN-T1-GE3 TTI: SI7113ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 100 V | 10.8 A | 132 mOhms | - 20 V, 20 V | 2.6 V | 10.9 nC | - 55 C | + 150 C | 27.8 W | Enhancement | Reel | ||||
Mfr: SIRA80DP-T1-RE3 TTI: SIRA80DP-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 620 uOhms | - 16 V, 20 V | 2.2 V | 125 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
Mfr: SIDR626DP-T1-GE3 TTI: SIDR626DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 60 V | 100 A | 1.7 mOhms | - 20 V, 20 V | 2 V | 68 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | |||
Mfr: SIJ186DP-T1-GE3 TTI: SIJ186DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 60 V | 79.4 A | 4.5 mOhms | - 20 V, 20 V | 2 V | 24.5 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors MOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 32 A | 220 mOhms | - 30 V, 30 V | 3.5 V | 130 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 61 A | 40 mOhms | - 30 V, 30 V | 3 V | 84 nC | - 55 C | + 150 C | 357 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 150 V | 44 A | 65 mOhms | - 15 V, 15 V | 2 V | 175 nC | - 55 C | + 150 C | 298 W | Enhancement | TrenchP | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 3 kV | 2 A | 21 Ohms | - 20 V, 20 V | 3 V | 73 nC | - 55 C | + 150 C | 520 W | Enhancement | Polar3 | Tube | ||||
0In Stock | Si | SMD/SMT | TO-252-3 | N-Channel | 1 Channel | 200 V | 36 A | 38 mOhms | - 20 V, 20 V | 2.5 V | 21 nC | - 55 C | + 150 C | 170 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR150DP-T1-RE3 TTI: SIR150DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 45-V (D-S) MOSFET N-CHANNEL PowerPAK | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 45 V | 110 A | 2.71 mOhms | - 16 V, 20 V | 2.3 V | 46.7 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35 mOhms | - 30 V, 30 V | 4 V | 394 nC | - 55 C | + 150 C | 417 W | Enhancement | Reel | |||||
Mfr: SIDR610DP-T1-GE3 TTI: SIDR610DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 200V Vds -/+20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 200 V | 39.6 A | 31.9 mOhms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | |||
Mfr: SIHA180N60E-GE3 TTI: SIHA180N60E-GE3 Vishay Semiconductors MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 33 nC | - 55 C | + 150 C | 33 W | Enhancement | Reel | ||||
Mfr: SIHH180N60E-T1-GE3 TTI: SIHH180N60E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs PowerPAK 8 x 8 | 0In Stock | Si | SMD/SMT | PowerPAK-4 | N-Channel | 1 Channel | 600 V | 19 A | 180 mOhms | - 30 V, 30 V | 3 V | 33 nC | - 55 C | + 150 C | 114 W | Enhancement | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 90 A | 12.8 mOhms | - 20 V, 20 V | 2.5 V | 78 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 12 A | 310 mOhms | - 30 V, 30 V | 3 V | 18.5 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 22 A | 145 mOhms | - 30 V, 30 V | 3.5 V | 37 nC | - 55 C | + 150 C | 37 W | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 650 V | 34 A | 100 mOhms | - 30 V, 30 V | 3.5 V | 56 nC | - 55 C | + 150 C | 40 W | Enhancement | HiPerFET | Tube |