MOSFETs
13,171 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 500 V | 20 A | 450 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 460 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 40 A | 170 mOhms | 20 V | 4.5 V | 320 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | SMD/SMT | ChipFET-8 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI5468DC-GE3 | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 44 A | 30 mOhms | 20 V | 2.5 V | 27.4 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | |||||
Mfr: IRFU210PBF TTI: IRFU210PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO251 200V 2.6A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | 30 V | 2 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1 kV | 6.1 A | 2 Ohms | 20 V | 2 V | 190 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | ||||||
Mfr: IRLR110TRPBF TTI: IRLR110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: IRFR220PBF TTI: IRFR220PBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 200V 4.8A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 4.8 A | 800 mOhms | 20 V | 2 V | 14 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 16 A | 18 mOhms | 25 V | 3 V | 43 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7121DN-GE3 | ||||
Mfr: SI4842BDY-T1-GE3 TTI: SI4842BDY-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V 28A 6.25W 4.2mohm @ 10V | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 28 A | 4.2 mOhms | 20 V | 1.4 V | 100 nC | - 55 C | + 150 C | 6.25 W | Enhancement | TrenchFET | Reel | SI4842BDY-GE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 60 A | 5.6 mOhms | 20 V | 3 V | 52 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7994DP-GE3 | ||||
Mfr: SI4630DY-T1-GE3 TTI: SI4630DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 25V Vds 16V Vgs SO-8 | 0In Stock | Si | TrenchFET | Reel | SI4630DY-GE3 | |||||||||||||||||
Mfr: SI7788DP-T1-GE3 TTI: SI7788DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 50A 69W 3.1mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 50 A | 3.1 mOhms | 20 V | 2.5 V | 82 nC | - 55 C | + 150 C | 69 W | Enhancement | TrenchFET | Reel | SI7788DP-GE3 | |||
Mfr: IXFH50N50P3 TTI: IXFH50N50P3 IXYS Availability: Not Available OnlineMOSFETs N-Channel: Power MOSFET w/Fast Diode | Not Available Online | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 50 A | 120 mOhms | 30 V | 5 V | 85 nC | - 55 C | + 150 C | 960 W | Enhancement | Polar3, HiperFET | Tube | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 200 V | 68 A | 55 mOhms | 15 V | 4 V | 380 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: SI7252DP-T1-GE3 TTI: SI7252DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 100 V | 36.7 A | 14 mOhms | 20 V | 1.5 V | 27 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1034CX-T1-GE3 TTI: SI1034CX-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC89-6 | 0In Stock | Si | SMD/SMT | SC-89-6 | N-Channel | 2 Channel | 20 V | 610 mA | 396 mOhms | 8 V | 400 mV | 1.3 nC | - 55 C | + 150 C | 220 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
Mfr: SI7619DN-T1-GE3 TTI: SI7619DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 24 A | 21 mOhms | 25 V | 1 V | 32 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 9.2 A | 270 mOhms | 20 V | 2 V | 16 nC | - 55 C | + 175 C | 3.7 W | Enhancement | Reel | ||||||
Mfr: SIB433EDK-T1-GE3 TTI: SIB433EDK-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs PowerPAK SC-75 | 0In Stock | Si | SMD/SMT | SC-75-6 | P-Channel | 1 Channel | 20 V | 9 A | 105 mOhms | 8 V | 1 V | 21 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET, PowerPAK | Reel | SIB433EDK-GE3 | |||
Mfr: SIS407DN-T1-GE3 TTI: SIS407DN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 8V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 25 A | 9.5 mOhms | 8 V | 400 mV | 38 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS407DN-GE3 |