MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7309DN-T1-GE3 TTI: SI7309DN-T1-GE3 Vishay Semiconductors MOSFETs -60V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 60 V | 8 A | 146 mOhms | - 20 V, 20 V | 3 V | 14.5 nC | - 55 C | + 150 C | 19.8 W | Enhancement | TrenchFET | Reel | SI7309DN-GE3 | |||
Mfr: IXFK102N30P TTI: IXFK102N30P IXYS Availability: Not Available OnlineMOSFETs 102 Amps 300V 0.033 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 300 V | 102 A | 33 mOhms | - 20 V, 20 V | 5 V | 224 nC | - 55 C | + 150 C | 700 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SI7129DN-T1-GE3 TTI: SI7129DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | - 20 V, 20 V | 2.8 V | 47.5 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET | Reel | SI7129DN-GE3 | |||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 1 kV | 800 mA | 20 Ohms | - 20 V, 20 V | 2 V | 11.3 nC | - 55 C | + 150 C | 42 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 30 A | 240 mOhms | - 20 V, 20 V | 2.5 V | 335 nC | - 55 C | + 150 C | 540 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | Through Hole | TO-3P-3 | P-Channel | 1 Channel | 200 V | 26 A | 170 mOhms | - 20 V, 20 V | 4 V | 56 nC | - 55 C | + 175 C | 300 W | Enhancement | Tube | ||||||
Mfr: IRLR110TRPBF TTI: IRLR110TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRLR | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | - 10 V, 10 V | 1 V | 6.1 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | - 10 V, 10 V | 1 V | 66 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
Mfr: IRFL210TRPBF TTI: IRFL210TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 200V 0.96 Amp | 0In Stock | Si | SMD/SMT | SOT-223-4 | N-Channel | 1 Channel | 200 V | 960 mA | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 2 W | Enhancement | Reel | IRFL210TRPBF-BE3 | ||||
Mfr: IRFRC20TRPBF TTI: IRFRC20TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 600V 2A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFRC20TRPBF-BE3 | ||||
Mfr: IRFR210TRPBF TTI: IRFR210TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds, 20V Vgs DPAK (TO-252) | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 2.6 A | 1.5 Ohms | - 20 V, 20 V | 4 V | 8.2 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR210TRPBF-BE3 | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 75 A | 25 mOhms | - 20 V, 20 V | 3 V | 74 nC | - 55 C | + 175 C | 360 W | Enhancement | Tube | ||||||
Mfr: IXTK120N25P TTI: IXTK120N25P IXYS Availability: Not Available OnlineMOSFETs 120 Amps 250V 0.024 Rds | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 120 A | 24 mOhms | - 20 V, 20 V | 5 V | 185 nC | - 55 C | + 175 C | 700 W | Enhancement | PolarHT | Tube | ||||
0In Stock | Si | Through Hole | TO-3P-3 | N-Channel | 1 Channel | 300 V | 52 A | 66 mOhms | - 20 V, 20 V | 2.5 V | 110 nC | - 55 C | + 150 C | 400 W | Enhancement | Tube | ||||||
Mfr: SI7615ADN-T1-GE3 TTI: SI7615ADN-T1-GE3 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 35 A | 4.4 mOhms | - 12 V, 12 V | 1.5 V | 122 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | SI7621DN-T1-GE3 | |||
Mfr: SI7463ADP-T1-GE3 TTI: SI7463ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 46 A | 10 mOhms | - 20 V, 20 V | 1.2 V | 96 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHB33N60E-GE3 TTI: SIHB33N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | - 30 V, 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | |||||
Mfr: SIHB30N60E-GE3 TTI: SIHB30N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs D2PAK (TO-263) | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 29 A | 125 mOhms | - 30 V, 30 V | 2.8 V | 85 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Depletion | Tube | ||||||
Mfr: SUD19P06-60L-E3 TTI: SUD19P06-60L-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 60V 19A 46W 60mohm @ 10V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 19 A | 60 mOhms | - 20 V, 20 V | 3 V | 40 nC | - 55 C | + 175 C | 46 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 20 V | 50 A | 28 mOhms | - 20 V, 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ44PBF-BE3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 2 Channel | 30 V | 60 A | 5.6 mOhms | - 20 V, 20 V | 3 V | 52 nC | - 55 C | + 150 C | 46 W | Enhancement | TrenchFET | Reel | SI7994DP-GE3 | ||||
Mfr: SI3493BDV-T1-E3 TTI: SI3493BDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V 8.0A 2.97W 27.5mohm @ 4.5V | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 27.5 mOhms | - 8 V, 8 V | 900 mV | 43.5 nC | - 55 C | + 150 C | 2.97 W | Enhancement | TrenchFET | Reel | SI3493BDV-T1-BE3 SI3493BDV-E3 | |||
Mfr: SIR410DP-T1-GE3 TTI: SIR410DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 35 A | 4.8 mOhms | - 20 V, 20 V | 1.2 V | 41 nC | - 55 C | + 150 C | 36 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR410DP-GE3 | |||
Mfr: SI1967DH-T1-E3 TTI: SI1967DH-T1-E3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | - 8 V, 8 V | 400 mV | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1967DH-E3 |
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