NC - MOSFETs
5,605 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 4 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRFZ44RPBF-BE3 | |||||
0In Stock | Si | 60 V | 8.9 A | 5.6 mOhms | 20 V | 4 V | 20 nC | - 55 C | + 175 C | 7.5 W | Reel | |||||||||||
Mfr: IRFPF50PBF TTI: IRFPF50PBF Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT IRFP | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 900 V | 6.7 A | 1.6 Ohms | 20 V | 2 V | 200 nC | - 55 C | + 150 C | 190 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 200 V | 140 A | 9.6 mOhms | 20 V | 2.5 V | 127 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 96 mOhms | 30 V | 3 V | 54 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPak-8 | 60 V | 20 V | 4 V | 141 nC | - 55 C | + 175 C | 333 W | Enhancement | Reel | ||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 35 A | 80 mOhms | 30 V | 5 V | 42 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | 20 V | 4 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | IRFZ24PBF-BE3 | |||||
Mfr: IRF540PBF-BE3 TTI: IRF540PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 100V 28A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 28 A | 77 mOhms | 20 V | 4 V | 72 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRF540PBF | ||||
Mfr: IRF530STRRPBF TTI: IRF530STRRPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 100V 14A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 100 V | 14 A | 160 mOhms | 20 V | 4 V | 26 nC | - 55 C | + 175 C | 88 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 5.6 A | 540 mOhms | 10 V | 2 V | 6.1 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRL510PBF-BE3 | |||||
Mfr: SIHD14N60ET1-GE3 TTI: SIHD14N60ET1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 600V 13A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF740APBF | |||||
Mfr: SIHG24N80AEF-GE3 TTI: SIHG24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 95 A | 4 mOhms | 20 V | 2 V | 108 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIRA64DP-T1-RE3 TTI: SIRA64DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 1.8 mOhms | - 16 V, 20 V | 1.1 V | 65 nC | - 55 C | + 150 C | 27.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS10ADN-T1-GE3 TTI: SISS10ADN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 31.7 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SI4056DY-T1-GE3 TTI: SI4056DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SI40 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 11.1 A | 17 mOhms | 20 V | 1.5 V | 29.5 nC | - 55 C | + 150 C | 5.7 W | Enhancement | TrenchFET | Reel | SI4056DY-GE3 | |||
Mfr: SI7112DN-T1-GE3 TTI: SI7112DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 17.8A 3.8W 7.5mohm @ 10V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 17.8 A | 7.5 mOhms | 12 V | 1.5 V | 18 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7112DN-GE3 | |||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 2.5 kV | 200 mA | 450 Ohms | 20 V | 2.5 V | 7.4 nC | - 55 C | + 150 C | 83 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 25 A | 120 mOhms | 30 V | 3 V | 45 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | ||||||
Mfr: SIRA58ADP-T1-RE3 TTI: SIRA58ADP-T1-RE3 Vishay Semiconductors MOSFETs 40V Vds 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 109 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI1922EDH-T1-GE3 TTI: SI1922EDH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 2 Channel | 20 V | 1.3 A | 198 mOhms | 8 V | 1 V | 2.5 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1922EDH-T1-BE3 SI1988DH-T1-GE3 | |||
Mfr: SI4214DDY-T1-E3 TTI: SI4214DDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 8.5 A | 19.5 mOhms | 20 V | 1.2 V | 22 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | |||||
Mfr: SISS10DN-T1-GE3 TTI: SISS10DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 60 A | 2.65 mOhms | - 16 V, 20 V | 2.4 V | 75 nC | - 55 C | + 150 C | 57 W | Enhancement | TrenchFET, PowerPAK | Reel |