MOSFETs
13,237 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 4.5 kV | 1 A | 80 Ohms | 20 V | 3.5 V | 46 nC | - 55 C | + 150 C | 520 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.5 kV | 2 A | 15 Ohms | 30 V | 6 V | 72 nC | - 55 C | + 150 C | 290 W | Enhancement | Linear | Tube | |||||
Mfr: IXFH46N65X2 TTI: IXFH46N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/46A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 46 A | 76 mOhms | 30 V | 2.7 V | 75 nC | - 55 C | + 150 C | 660 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIHP38N60E-GE3 TTI: SIHP38N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 43 A | 56 mOhms | 30 V | 4 V | 122 nC | - 55 C | + 150 C | 313 W | Enhancement | Reel | |||||
Mfr: SIRA90DP-T1-GE3 TTI: SIRA90DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 100A Id Qg 48nC Typ. | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 100 A | 650 uOhms | - 16 V, 20 V | 800 mV | 153 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIA468DJ-T1-GE3 TTI: SIA468DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 37.8 A | 8.4 mOhms | - 16 V, 20 V | 1 V | 22 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 12.6 A | 30 mOhms | 20 V | 2.2 V | 13.5 nC | - 55 C | + 150 C | 4.8 W | Enhancement | Reel | ||||||
Mfr: SIR680DP-T1-RE3 TTI: SIR680DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 2.4 mOhms | 20 V | 2 V | 105 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR692DP-T1-RE3 TTI: SIR692DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 250V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 250 V | 24.2 A | 52 mOhms | 20 V | 2 V | 40 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR164ADP-T1-GE3 TTI: SIR164ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.2 mOhms | - 16 V, 20 V | 1.1 V | 77 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: RSR025P03HZGTL TTI: RSR025P03HZGTL ROHM Semiconductor Availability: Not Available OnlineMOSFETs SOT346 P CHAN 30V | Not Available Online | Si | SMD/SMT | SC-96-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 98 mOhms | 20 V | 2.5 V | 5.4 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RSR025P03HZG | |||
Mfr: SISH129DN-T1-GE3 TTI: SISH129DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 35 A | 11.4 mOhms | 20 V | 2.8 V | 71 nC | - 50 C | + 150 C | 52.1 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISH402DN-T1-GE3 TTI: SISH402DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 35 A | 6 mOhms | 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2319DDS-T1-GE3 TTI: SI2319DDS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -40V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 40 V | 3.6 A | 75 mOhms | 20 V | 1 V | 12.5 nC | - 55 C | + 150 C | 1.7 W | Enhancement | Reel | |||||
Mfr: SISS32DN-T1-GE3 TTI: SISS32DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds; 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | 20 V | 2 V | 42 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SISS61DN-T1-GE3 TTI: SISS61DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs Pch 20V Vds 8V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 20 V | 111.9 A | 2.9 mOhms | 8 V | 900 mV | 154 nC | - 55 C | + 150 C | 65.8 W | Enhancement | Reel | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 250 V | 82 A | 35 mOhms | 20 V | 5 V | 142 nC | - 55 C | + 150 C | 500 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 300 V | 36 A | 110 mOhms | 30 V | 3 V | 70 nC | - 55 C | + 150 C | 300 W | Enhancement | PolarHT | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | 20 V | 2 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | PolarP | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 85 V | 96 A | 13 mOhms | 15 V | 2 V | 180 nC | - 55 C | + 150 C | 298 W | Enhancement | Tube | ||||||
Mfr: IXTK170P10P TTI: IXTK170P10P IXYS Availability: Not Available OnlineMOSFETs -170.0 Amps -100V 0.012 Rds | Not Available Online | Si | Through Hole | TO-264-3 | P-Channel | 1 Channel | 100 V | 170 A | 14 mOhms | 20 V | 2 V | 240 nC | - 55 C | + 150 C | 890 W | Enhancement | Tube | |||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 500 V | 60 A | 100 mOhms | 30 V | 4.5 V | 610 nC | - 55 C | + 150 C | 960 W | Enhancement | Linear L2 | Tube | |||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
0In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | 20 V | 4 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 150 V | 15 A | 240 mOhms | Tube |