NC - MOSFETs
5,605 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SUM90N03-2M2P-E3 TTI: SUM90N03-2M2P-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V 90A 250W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 30 V | 90 A | 1.8 mOhms | 20 V | 1.5 V | 257 nC | - 55 C | + 175 C | 250 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIHA24N80AE-GE3 TTI: SIHA24N80AE-GE3 Vishay / Siliconix MOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 9 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 35 W | Enhancement | Reel | |||||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 23 A | 158 mOhms | 30 V | 4 V | 63 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 50 A | 145 mOhms | 30 V | 5 V | 94 nC | - 55 C | + 150 C | 1.04 mW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-GE3 | ||||
Mfr: SIDR870ADP-T1-GE3 TTI: SIDR870ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8DC | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 95 A | 10.5 mOhms | 20 V | 3 V | 25.5 nC | - 55 C | + 150 C | 125 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH112DN-T1-GE3 TTI: SISH112DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 12V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH | N-Channel | 1 Channel | 30 V | 17.8 A | 7.5 mOhms | 12 V | 600 mV | 27 nC | - 50 C | + 150 C | 3.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXTH1N200P3HV TTI: IXTH1N200P3HV IXYS Availability: 0In StockMOSFETs 2000V/1A HV Power MOSFET, TO-247HV | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 2 kV | 1 A | 40 Ohms | 20 V | 2 V | 23.5 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | ||||||
Mfr: SIS110DN-T1-GE3 TTI: SIS110DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 14.2 A | 54 mOhms | 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2328DS-T1-BE3 TTI: SI2328DS-T1-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT233 100V 1.15A N-CH MOSFET | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 1.15 A | 250 mOhms | 20 V | 4 V | 3.3 nC | - 55 C | + 150 C | 730 mW | Enhancement | Reel | SI2328DS-T1-E3 | ||||
Mfr: SISS32ADN-T1-GE3 TTI: SISS32ADN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 80V | 0In Stock | Si | SMD/SMT | PowerPak-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.3 mOhms | 20 V | 2 V | 24 nC | - 55 C | + 150 C | 65.7 W | Enhancement | Reel | SISS32ADN | ||||
Mfr: SIS128LDN-T1-GE3 TTI: SIS128LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWER P AKNC HAN80V | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 33.7 A | 20.3 mOhms | 20 V | 1 V | 20 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 23 A | 31 mOhms | 20 V | 3 V | 11 nC | - 55 C | + 175 C | 100 W | Enhancement | Reel | SUD23N06-31L-T4-E3 | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 20 V | 22 A | 4.9 mOhms | 16 V | 2 V | 20 nC | - 55 C | + 150 C | 3.8 W | Enhancement | TrenchFET | Reel | SI7108DN-E3 | ||||
Mfr: SIHG35N60E-GE3 TTI: SIHG35N60E-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-247AC | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 32 A | 82 mOhms | 30 V | 4 V | 88 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 21 A | 180 mOhms | 30 V | 4 V | 57 nC | - 55 C | + 150 C | 227 W | Enhancement | Reel | ||||||
Mfr: SI1480BDH-T1-GE3 TTI: SI1480BDH-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-Channel 80 V (D-S) MOSFET PowerPAK SO-8, 1.8 mohm a. 10V 1.7 mohm a. 7.5V | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.38 A | 212 mOhms | 20 V | 3 V | 3.9 nC | - 55 C | + 150 C | 2.6 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRFBE30PBF | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 11 A | 520 mOhms | 30 V | 4 V | 52 nC | - 55 C | + 150 C | 170 W | Enhancement | Reel | IRFB11N50APBF | |||||
Mfr: SIHB17N80AE-GE3 TTI: SIHB17N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO263 800V 15A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 15 A | 250 mOhms | 30 V | 4 V | 41 nC | - 55 C | + 155 C | 179 W | Enhancement | Reel | |||||
Mfr: IRL640PBF-BE3 TTI: IRL640PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 200V 17A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 17 A | 180 mOhms | 10 V | 2 V | 66 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRL640PBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 5.2 A | 800 mOhms | 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF620PBF-BE3 | |||||
Mfr: SIHP17N80AEF-GE3 TTI: SIHP17N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 15A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 15 A | 305 mOhms | 30 V | 4 V | 42 nC | - 55 C | + 150 C | 179 W | Enhancement | Reel | |||||
Mfr: SIHG186N60EF-GE3 TTI: SIHG186N60EF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO247 600V 8.4A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 8.4 A | 168 mOhms | 30 V | 5 V | 32 nC | - 55 C | + 150 C | 156 W | Enhancement | Reel |