NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: IRF740STRLPBF TTI: IRF740STRLPBF Vishay Semiconductors Availability: 19,200In StockMOSFETs N-CH 400V MOSFET MOSFET D2-PA | 19,200In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 20 V, 20 V | 2 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SIRS4600DP-T1-RE3 TTI: SIRS4600DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs POWRPK N CHAN 60V | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 60 V | 334 A | 1.2 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SI1442DH-T1-GE3 TTI: SI1442DH-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 12V Vds 8V Vgs SC70-6 | 3,000In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 12 V | 4 A | 20 mOhms | - 8 V, 8 V | 1 V | 33 nC | - 55 C | + 150 C | 1.56 W | Enhancement | TrenchFET | Reel | SI1442DH-T1-BE3 SI1442DH-GE3 | |||
Mfr: SIRS4400DP-T1-RE3 TTI: SIRS4400DP-T1-RE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs POWRPK N CHAN 40V | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 40 V | 440 A | 690 uOhms | - 16 V, 20 V | 2.3 V | 90 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: IRFBE30LPBF TTI: IRFBE30LPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-Chan 800V 4.1 Amp | 1,000In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 2 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | |||||
Mfr: SI2392ADS-T1-GE3 TTI: SI2392ADS-T1-GE3 Vishay Semiconductors Availability: 12,000In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 12,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 3.1 A | 102 mOhms | - 20 V, 20 V | 3 V | 2.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2392ADS-T1-BE3 | |||
Mfr: SIS110DN-T1-GE3 TTI: SIS110DN-T1-GE3 Vishay / Siliconix Availability: 9,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 14.2 A | 54 mOhms | - 20 V, 20 V | 2 V | 13 nC | - 55 C | + 150 C | 24 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2306BDS-T1-GE3 TTI: SI2306BDS-T1-GE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 30V 4.0A 1.25W 47mohm @ 4.5V | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 3.16 A | 47 mOhms | - 20 V, 20 V | 3 V | 3 nC | - 55 C | + 150 C | 750 mW | Enhancement | TrenchFET | Reel | SI2306BDS-T1-BE3 SI2306BDS-GE3 | |||
Mfr: SIRS5800DP-T1-GE3 TTI: SIRS5800DP-T1-GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs N-Channel 80 V (D-S) MOSFET | 6,000In Stock | Si | SMD/SMT | SO-8S | N-Channel | 1 Channel | 80 V | 265 A | 1.8 mOhms | - 20 V, 20 V | 4 V | 81 nC | - 55 C | + 150 C | 240 W | Enhancement | Reel | |||||
Mfr: SIR622DP-T1-RE3 TTI: SIR622DP-T1-RE3 Vishay / Siliconix Availability: 3,000In StockMOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 | 3,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 51.6 A | 17.7 mOhms | - 20 V, 20 V | 2.5 V | 41 nC | - 55 C | + 150 C | 104 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SIHH070N60EF-T1GE3 TTI: SIHH070N60EF-T1GE3 Vishay / Siliconix Availability: 6,000In StockMOSFETs 600V PowerPAK 8x8 N-CHANNEL | 6,000In Stock | Si | SMD/SMT | PowerPAK-8 x 8 | N-Channel | 1 Channel | 600 V | 36 A | 71 mOhms | - 30 V, 30 V | 5 V | 50 nC | - 55 C | + 150 C | 202 W | Enhancement | Reel | |||||
Mfr: IXFT150N30X3HV TTI: IXFT150N30X3HV IXYS Availability: 60In StockMOSFETs MSFT N-CH ULTRA JNCT X3 3&44 | 60In Stock | Si | SMD/SMT | D3PAK-3 (TO-268-3) | N-Channel | 1 Channel | 300 V | 150 A | 8.3 mOhms | - 20 V, 20 V | 4.5 V | 177 nC | - 55 C | + 150 C | 890 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIR876ADP-T1-GE3 TTI: SIR876ADP-T1-GE3 Vishay Semiconductors Availability: 15,000In StockMOSFETs 100V Vds 20V Vgs PowerPAK SO-8 | 15,000In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 40 A | 9 mOhms | - 20 V, 20 V | 1.5 V | 49 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR876ADP-GE3 | |||
Mfr: SISS98DN-T1-GE3 TTI: SISS98DN-T1-GE3 Vishay Semiconductors Availability: 9,000In StockMOSFETs 200V Vds 20V Vgs PowerPAK 1212-8S | 9,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 200 V | 14.1 A | 85 mOhms | - 20 V, 20 V | 2 V | 18.2 nC | - 55 C | + 150 C | 57 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
Mfr: SUP57N20-33-E3 TTI: SUP57N20-33-E3 Vishay Semiconductors Availability: 1,000In StockMOSFETs 200V 57A 300W | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 200 V | 57 A | 27 mOhms | - 20 V, 20 V | 2 V | 130 nC | - 55 C | + 175 C | 300 W | Enhancement | TrenchFET | Tube | ||||
Mfr: SI4816BDY-T1-GE3 TTI: SI4816BDY-T1-GE3 Vishay Semiconductors Availability: 2,500In StockMOSFETs 30V Vds 20V Vgs SO-8 | 2,500In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816DY-T1-E3-S | |||
6,900In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 44 A | 30 mOhms | - 20 V, 20 V | 2.5 V | 27.4 nC | - 55 C | + 175 C | 130 W | Enhancement | HiPerFET | Tube | |||||
Mfr: SIS476DN-T1-GE3 TTI: SIS476DN-T1-GE3 Vishay Semiconductors Availability: 6,000In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 6,000In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 40 A | 2.05 mOhms | - 16 V, 20 V | 1 V | 77 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS476DN-GE3 | |||
Mfr: SI4100DY-T1-GE3 TTI: SI4100DY-T1-GE3 Vishay Semiconductors Availability: 50,000In StockMOSFETs 100V Vds 20V Vgs SO-8 | 50,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 100 V | 6.8 A | 63 mOhms | - 20 V, 20 V | 2 V | 20 nC | - 55 C | + 150 C | 6 W | Enhancement | TrenchFET | Reel | SI4100DY-GE3 | |||
Mfr: IRFP450APBF TTI: IRFP450APBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 500V TO247 | 1,000In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 14 A | 400 mOhms | - 30 V, 30 V | 2 V | 64 nC | - 55 C | + 150 C | 190 W | Enhancement | Tube | |||||
Mfr: SI4136DY-T1-GE3 TTI: SI4136DY-T1-GE3 Vishay Semiconductors Availability: 10,000In StockMOSFETs 20V Vds 20V Vgs SO-8 | 10,000In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 20 V | 46 A | 2 mOhms | - 20 V, 20 V | 1 V | 110 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET | Reel | SI4136DY-GE3 | |||
Mfr: IRFZ24SPBF TTI: IRFZ24SPBF Vishay Semiconductors Availability: 1,000In StockMOSFETs 60V 100mOhm@10V 17A N-Ch | 1,000In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 17 A | 100 mOhms | - 20 V, 20 V | 2 V | 25 nC | - 55 C | + 175 C | 60 W | Enhancement | Tube | |||||
3,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 20 V, 20 V | 4 V | 63 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRF840PBF-BE3 SIHF840-E3 | |||||
Mfr: IRFBG30PBF TTI: IRFBG30PBF Vishay Semiconductors Availability: 1,000In StockMOSFETs N-CH SINGLE 1KV TO-220 | 1,000In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 3.1 A | 5 Ohms | - 20 V, 20 V | 4 V | 80 nC | - 55 C | + 150 C | 125 W | Enhancement | Tube | IRFBG30PBF-BE3 | ||||
Mfr: 2N7002K-T1-GE3 TTI: 2N7002K-T1-GE3 Vishay Semiconductors Availability: 3,000In StockMOSFETs 60V Vds 20V Vgs SOT-23 | 3,000In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 60 V | 300 mA | 2 Ohms | - 20 V, 20 V | 1 V | 400 pC | - 55 C | + 150 C | 350 mW | Enhancement | Reel | 2N7002K-GE3 |
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