MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIR876BDP-T1-RE3 TTI: SIR876BDP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT669 100V 51.4A N-CH MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 100 V | 51.4 A | 12.3 mOhms | - 20 V, 20 V | 2.4 V | 65 nC | - 55 C | + 150 C | 71.4 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIR5102DP-T1-RE3 TTI: SIR5102DP-T1-RE3 Vishay Availability: 0In StockMOSFETs SOT669 100V 110A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
Mfr: SI4151DY-T1-GE3 TTI: SI4151DY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs SO8 P CHAN 30V | 0In Stock | Si | SMD/SMT | SO-8 | P-Channel | 1 Channel | 30 V | 20.5 A | 7.5 mOhms | - 25 V, 25 V | 2.5 V | 28 nC | - 55 C | + 150 C | 5.6 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | P-Channel | 1 Channel | 20 V | 450 mA | 760 mOhms | - 8 V, 8 V | 1 V | 1.65 nC | - 55 C | + 150 C | 190 mW | Enhancement | TrenchFET | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 15 A | 280 mOhms | - 30 V, 30 V | 4 V | 39 nC | - 55 C | + 150 C | 34 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 1 A | 16 Ohms | - 20 V, 20 V | 2.5 V | 47 nC | - 55 C | + 150 C | 290 W | Depletion | Tube | ||||||
Mfr: IXFH22N65X2 TTI: IXFH22N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/22A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 22 A | 160 mOhms | - 30 V, 30 V | 2.7 V | 38 nC | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||
Mfr: IXFH34N65X2 TTI: IXFH34N65X2 IXYS Availability: 0In StockMOSFETs MOSFET 650V/34A Ultra Junction X2 | 0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 34 A | 105 mOhms | - 30 V, 30 V | 2.7 V | 56 nC | - 55 C | + 150 C | 540 W | Enhancement | HiPerFET | Tube | ||||
Mfr: SIS488DN-T1-GE3 TTI: SIS488DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs RECOMMENDED ALT SIS4 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 40 A | 4.5 mOhms | - 20 V, 20 V | 1.1 V | 32 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: IXFK52N100X TTI: IXFK52N100X IXYS Availability: Not Available OnlineMOSFETs 52A 1000V POWER MOSFET | Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 1 kV | 52 A | 125 mOhms | - 30 V, 30 V | 3.5 V | 245 nC | - 55 C | + 150 C | 1.25 kW | Enhancement | HiPerFET | Tube | ||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 3 V | 74 nC | - 55 C | + 150 C | 250 W | Enhancement | Reel | ||||||
Mfr: SIJA58ADP-T1-GE3 TTI: SIJA58ADP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 40V Vds; 20/-16V Vgs PowerPAK SO-8L | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 40 V | 32.3 A | 2.65 mOhms | - 16 V, 20 V | 1.1 V | 61 nC | - 55 C | + 150 C | 56.8 W | Enhancement | Reel | |||||
Mfr: SI2369BDS-T1-GE3 TTI: SI2369BDS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30-V (D-S) MOSFET P-CHANNEL | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 7.5 A | 27 mOhms | - 20 V, 16 V | 2.2 V | 12.9 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIZ350DT-T1-GE3 TTI: SIZ350DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 16V Vgs PowerPAIR 3 x 3 | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 30 V | 30 A | 6.75 mOhms | - 12 V, 16 V | 1 V | 20.3 nC | - 55 C | + 150 C | 16.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SISH101DN-T1-GE3 TTI: SISH101DN-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds; +/-25V Vgs PowerPAK 1212-8SH | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8SH-8 | P-Channel | 1 Channel | 30 V | 35 A | 7.2 mOhms | - 25 V, 25 V | 2.5 V | 102 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET; PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 20 A | 5.1 mOhms | - 16 V, 20 V | 1.1 V | 19.4 nC | - 55 C | + 150 C | 26.5 W | Enhancement | PowerPAK | Reel | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 5 A | 826 mOhms | - 30 V, 30 V | 4 V | 15 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | ||||||
Mfr: IRF9640PBF-BE3 TTI: IRF9640PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 200V 11A P-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 200 V | 11 A | 500 mOhms | - 20 V, 20 V | 4 V | 44 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF9640PBF | ||||
Mfr: IRFR9014TRPBF-BE3 TTI: IRFR9014TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 P CHAN 60V | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 5.1 A | 500 mOhms | - 20 V, 20 V | 4 V | 12 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | IRFR9014TRPBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | - 20 V, 20 V | 4 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | IRF9540PBF | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 7.7 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR014TRLPBF | |||||
0In Stock | Si | SMD/SMT | SOT-323-3 | P-Channel | 1 Channel | 20 V | 1.4 A | 150 mOhms | - 8 V, 8 V | 800 mV | 4.3 nC | - 50 C | + 150 C | 280 mW | Enhancement | TrenchFET | Reel | SI1317DL-T1-GE3 | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 200 V | 35.1 A | 37.5 mOhms | - 20 V, 20 V | 4 V | 21 nC | - 55 C | + 175 C | 125 W | Enhancement | TrenchFET | Reel | SUD90330E-GE3 | ||||
0In Stock | Si | SMD/SMT | TO-268-3 | P-Channel | 1 Channel | 100 V | 140 A | 10 mOhms | - 15 V, 15 V | 4 V | 400 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 250 V | 360 mA | 4 Ohms | - 15 V, 15 V | - 55 C | + 125 C | 1.1 W | Depletion | Clare | Reel |
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