MOSFETs
13,137 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIA906EDJ-T1-GE3 TTI: SIA906EDJ-T1-GE3 Vishay Semiconductors MOSFETs 20V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 2 Channel | 20 V | 4.5 A | 46 mOhms | - 8 V, 8 V | 600 mV | 950 pC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA906EDJ-GE3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 7 A | 1.9 Ohms | - 30 V, 30 V | - 55 C | + 150 C | 300 W | HiPerFET | Tube | ||||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 52 A | 50 mOhms | - 20 V, 20 V | 4 V | 60 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube | ||||||
Mfr: SIA519EDJ-T1-GE3 TTI: SIA519EDJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N- & P- Channel 20V MOSFET | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | N-Channel, P-Channel | 2 Channel | 20 V | 4.5 A | 40 mOhms, 90 mOhms | - 8 V, 8 V | 500 mV, 600 mV | 3.7 nC, 5.3 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA519EDJ-GE3 | |||
Mfr: SI7153DN-T1-GE3 TTI: SI7153DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 30 V | 18 A | 9.5 mOhms | - 25 V, 25 V | 2.5 V | 62 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | P-Channel | 1 Channel | 200 V | 48 A | 85 mOhms | - 20 V, 20 V | 2 V | 103 nC | - 55 C | + 150 C | 462 W | Enhancement | PolarP | Tube | |||||
Mfr: SIA931DJ-T1-GE3 TTI: SIA931DJ-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 2 Channel | 30 V | 4.5 A | 65 mOhms | - 20 V, 20 V | 1.2 V | 13 nC | - 55 C | + 150 C | 7.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR680DP-T1-RE3 TTI: SIR680DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 80 V | 100 A | 2.4 mOhms | - 20 V, 20 V | 2 V | 105 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIHF065N60E-GE3 TTI: SIHF065N60E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 650V Vds; 30V Vgs TO-220 | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 40 A | 65 mOhms | - 30 V, 30 V | 3 V | 74 nC | - 55 C | + 150 C | 39 W | Enhancement | Reel | |||||
Mfr: SIZ260DT-T1-GE3 TTI: SIZ260DT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs DUAL N-CHANNEL 80-V PowerPAIR 3 x 3S | 0In Stock | Si | SMD/SMT | PowerPAIR-3x3-8 | N-Channel | 2 Channel | 80 V | 24.6 A, 24.7 A | 24.5 mOhms, 24.7 mOhms | - 20 V, 20 V | 1.1 V | 13.1 nC, 13.3 nC | - 55 C | + 150 C | 33 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 800 V | 8 A | 450 mOhms | - 30 V, 30 V | 2 V | 28 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | SIHG11N80AE | |||||
Mfr: SIS9634LDN-T1-GE3 TTI: SIS9634LDN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs POWRPK N CHAN 60V | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 2 Channel | 60 V | 6 A | 31 mOhms | - 20 V, 20 V | 3 V | 11 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | |||||
Mfr: SIJ494DP-T1-GE3 TTI: SIJ494DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-Ch 150V Vds 16.1nC Qg Typ | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8-4 | N-Channel | 1 Channel | 150 V | 36.8 A | 19.3 mOhms | - 20 V, 20 V | 2.5 V | 31 nC | - 55 C | + 150 C | 69.4 W | Enhancement | ThunderFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 50 A | 8.9 mOhms | - 20 V, 20 V | 4 V | 50 nC | - 55 C | + 175 C | 125 W | Enhancement | ThunderFET | Reel | |||||
Mfr: SIA477EDJ-T1-GE3 TTI: SIA477EDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 12V 14mOhm@4.5V 12A P-Ch | 0In Stock | Si | SMD/SMT | SC-70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11.6 mOhms | - 8 V, 8 V | 1 V | 87 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI2399DS-T1-GE3 TTI: SI2399DS-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -20V Vds 12V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 20 V | 6 A | 34 mOhms | - 12 V, 12 V | 1.5 V | 10 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2399DS-T1-BE3 | |||
Mfr: RSR025P03HZGTL TTI: RSR025P03HZGTL ROHM Semiconductor Availability: Not Available OnlineMOSFETs SOT346 P CHAN 30V | Not Available Online | Si | SMD/SMT | SC-96-3 | P-Channel | 1 Channel | 30 V | 2.5 A | 98 mOhms | - 20 V, 20 V | 2.5 V | 5.4 nC | - 55 C | + 150 C | 1 W | Enhancement | AEC-Q101 | Reel | RSR025P03HZG | |||
Mfr: SIRA62DP-T1-RE3 TTI: SIRA62DP-T1-RE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 80 A | 1.2 mOhms | - 12 V, 16 V | 1 V | 61.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 7 A | 250 mOhms | - 30 V, 30 V | 4 V | 41 nC | - 55 C | + 155 C | 34 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | SI2338DS-T1-GE3 | |||||
Mfr: SIA112LDJ-T1-GE3 TTI: SIA112LDJ-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 100V PPAKSC-70-6L | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 100 V | 8.8 A | 119 mOhms | - 20 V, 20 V | 2.5 V | 2.7 nC | - 55 C | + 150 C | 15 W | Enhancement | Reel | |||||
Mfr: SIS434DN-T1-GE3 TTI: SIS434DN-T1-GE3 Vishay Semiconductors MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 40 V | 35 A | 6.3 mOhms | - 20 V, 20 V | 1.2 V | 40 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS434DN-GE3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 30 A | 200 mOhms | - 20 V, 20 V | 4.5 V | 240 nC | - 55 C | + 150 C | 400 W | Enhancement | Linear L2 | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 60 V | 50 A | 15 mOhms | - 20 V, 20 V | 3 V | 110 nC | - 55 C | + 175 C | 136 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 150 V | 690 mA | 1.2 Ohms | - 20 V, 20 V | 2.5 V | 12 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI2325DS-T1-BE3 SI2325DS-E3 |