MOSFETs
13,031 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI4816BDY-T1-E3 TTI: SI4816BDY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 6.8 A, 11.4 A | 11.5 mOhms, 18.5 mOhms | - 20 V, 20 V | 1 V | 7.8 nC, 11.6 nC | - 55 C | + 150 C | 1.4 W, 2.4 W | Enhancement | TrenchFET | Reel | SI4816BDY-E3 | |||
Mfr: SI7850DP-T1-E3 TTI: SI7850DP-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 60 V | 6.2 A | 22 Ohms | - 20 V, 20 V | 3 V | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI7850DP-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 1.8 A | 6.5 Ohms | - 20 V, 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBE20PBF-BE3 | |||||
Mfr: IRF840ALPBF TTI: IRF840ALPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO262 500V 8A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-262-3 | N-Channel | 1 Channel | 500 V | 8 A | 850 mOhms | - 30 V, 30 V | 2 V | 38 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: IRFU9110PBF TTI: IRFU9110PBF Vishay Semiconductors Availability: 0In StockMOSFETs P-Chan 100V 3.1 Amp | 0In Stock | Si | Through Hole | TO-251-3 | P-Channel | 1 Channel | 100 V | 3.1 A | 1.2 Ohms | - 20 V, 20 V | 4 V | 8.7 nC | - 55 C | + 150 C | 25 W | Enhancement | Reel | |||||
Mfr: SI3456DDV-T1-E3 TTI: SI3456DDV-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 30 V | 6.3 A | 40 mOhms | - 20 V, 20 V | 1.2 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3456DDV-T1-BE3 SI3456DDV-E3 | |||
0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 30 V | 19.2 A | 15.3 mOhms | - 25 V, 25 V | 2.6 V | 135 nC | - 55 C | + 150 C | 5.9 W | Enhancement | TrenchFET | Reel | SI4483ADY-GE3 | ||||
0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 2 Channel | 30 V | 5.8 A | 40 mOhms | - 20 V, 20 V | 3 V | 9 nC | - 55 C | + 150 C | 2.3 W | Enhancement | TrenchFET | Reel | SI4936CDY-GE3 | ||||
Mfr: IRFR9214TRLPBF TTI: IRFR9214TRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO252 250V 2.7A P-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 250 V | 2.7 A | 3 Ohms | - 20 V, 20 V | 4 V | 14 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | |||||
Mfr: IRF9520STRLPBF TTI: IRF9520STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs P-CH -100V HEXFET MOSFET | 0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 6.8 A | 600 mOhms | - 20 V, 20 V | 4 V | 18 nC | - 55 C | + 175 C | 60 W | Enhancement | Reel | |||||
Mfr: SI2307CDS-T1-E3 TTI: SI2307CDS-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | P-Channel | 1 Channel | 30 V | 3.5 A | 88 mOhms | - 20 V, 20 V | 1 V | 4.1 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | SI2307CDS-T1-BE3 SI2307CDS-E3 | |||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 100 V | 160 A | 7 mOhms | - 55 C | + 175 C | 430 W | Enhancement | HiPerFET | Tube | ||||||||
0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 30 V | 6 A | 28 mOhms | - 20 V, 20 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2338DS-T1-BE3 SI2338DS-GE3 | ||||
Mfr: SIHP12N60E-E3 TTI: SIHP12N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220AB | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 12 A | 380 mOhms | - 30 V, 30 V | 4 V | 29 nC | - 55 C | + 150 C | 147 W | Enhancement | Reel | SIHP12N60E-BE3 | ||||
Mfr: SI4463CDY-T1-GE3 TTI: SI4463CDY-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | P-Channel | 1 Channel | 20 V | 18.6 A | 8 mOhms | - 12 V, 12 V | 600 mV | 108 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | TSOP-6 | N-Channel | 1 Channel | 80 V | 4.6 A | 93 mOhms | - 20 V, 20 V | 1.2 V | 4.9 nC | - 55 C | + 150 C | 3.6 W | Enhancement | TrenchFET | Reel | SI3476DV-T1-BE3 | ||||
Mfr: SIA449DJ-T1-GE3 TTI: SIA449DJ-T1-GE3 Vishay Semiconductors MOSFETs -30V Vds 12V Vgs PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 30 V | 12 A | 15.5 mOhms | - 12 V, 12 V | 1.5 V | 72 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SI8466EDB-T2-E1 TTI: SI8466EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 5.4 A | 43 mOhms | - 5 V, 5 V | 350 mV | 13 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8812DB-T2-E1 TTI: SI8812DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 3.2 A | 60 mOhms | - 8 V, 8 V | 400 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-89-3 | N-Channel | 1 Channel | 60 V | 600 mA | 1 Ohms | - 15 V, 15 V | 3.1 V | - 55 C | + 150 C | 1.1 W | Depletion | Clare | Reel | ||||||
Mfr: SIRA14BDP-T1-GE3 TTI: SIRA14BDP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds; 20/-16V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 21 A | 5.38 mOhms | - 16 V, 20 V | 1.1 V | 22 nC | - 55 C | + 150 C | 36 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 120 A | 12 mOhms | - 20 V, 20 V | 2.5 V | 122 nC | - 55 C | + 150 C | 480 W | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 650 V | 24 A | 145 mOhms | - 30 V, 30 V | 3 V | - 55 C | + 150 C | 390 W | Enhancement | HiPerFET | Tube | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 80 V | 150 A | 2.8 mOhms | - 20 V, 20 V | 2 V | 151.2 nC | - 55 C | + 175 C | 375 W | Enhancement | TrenchFET | Reel | |||||
0In Stock | Si | SMD/SMT | SC-75-6 | N-Channel | 1 Channel | 30 V | 4.5 A | 57 mOhms | - 12 V, 12 V | 1.4 V | 7.5 nC | - 55 C | + 150 C | 1.9 W | Enhancement | Reel |
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