NC - MOSFETs
5,504 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: IRF630SPBF TTI: IRF630SPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO263 200V 9A N-CH MOSFET | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 200 V | 9 A | 400 mOhms | - 20 V, 20 V | 2 V | 43 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 400 V | 10 A | 550 mOhms | - 30 V, 30 V | 4 V | 36 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | IRF740APBF-BE3 | |||||
Mfr: IRFUC20PBF TTI: IRFUC20PBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 2.0 Amp | 0In Stock | Si | Through Hole | TO-251-3 | N-Channel | 1 Channel | 600 V | 2 A | 4.4 Ohms | - 20 V, 20 V | 2 V | 18 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
Mfr: IRFIBF20GPBF TTI: IRFIBF20GPBF Vishay Semiconductors Availability: 0In StockMOSFETs TO220 900V 1.2A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 900 V | 1.2 A | 8 Ohms | - 20 V, 20 V | 2 V | 38 nC | - 55 C | + 150 C | 30 W | Enhancement | Reel | |||||
Mfr: SIHFR120-GE3 TTI: SIHFR120-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO252 100V 7.7A N-CH MOSFET | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 7.7 A | 270 mOhms | - 20 V, 20 V | 4 V | 16 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 30 V | 40 A | 4.9 mOhms | - 20 V, 20 V | 2.4 V | 54 nC | - 55 C | + 175 C | 48 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 80 V | 84.1 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 44.5 nC | - 55 C | + 150 C | 92.5 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8 | N-Channel | 1 Channel | 100 V | 120 A | 3.2 mOhms | - 20 V, 20 V | 4 V | 86 nC | - 55 C | + 150 C | 132 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 35 A | 26 mOhms | - 20 V, 20 V | 4.4 V | 31 nC | - 55 C | + 175 C | 83 W | Enhancement | Reel | SUD35N10-26P-E3 | |||||
Mfr: SIS5712DN-T1-GE3 TTI: SIS5712DN-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CH SINGLE 150V PPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK 1212-8 | N-Channel | 1 Channel | 150 V | 18 A | 55.5 mOhms | - 20 V, 20 V | 4 V | 7.5 nC | - 55 C | + 150 C | 39.1 W | Enhancement | Reel | |||||
Mfr: SIJH5800E-T1-GE3 TTI: SIJH5800E-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CH SINGLE 80V PPAK8X8L | 0In Stock | Si | SMD/SMT | PowerPAK-8x8 | N-Channel | 1 Channel | 80 V | 302 A | 1.35 mOhms, 1.58 mOhms | - 20 V, 20 V | 2 V, 4 V | 103 nC | - 55 C | + 175 C | 333 W | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 18 A | 225 mOhms | - 30 V, 30 V | 5 V | 65 nC | - 55 C | + 150 C | 223 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHP24N80AEF-GE3 TTI: SIHP24N80AEF-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 800V 20A N-CH MOSFET | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 800 V | 20 A | 170 mOhms | - 30 V, 30 V | 4 V | 60 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 60 V | 10 A | 200 mOhms | - 20 V, 20 V | 4 V | 11 nC | - 55 C | + 175 C | 43 W | Enhancement | Reel | IRFZ14PBF | |||||
0In Stock | Si | Through Hole | TO-220FP-3 | N-Channel | 1 Channel | 800 V | 8 A | 391 mOhms | - 30 V, 30 V | 4 V | 42 nC | - 55 C | + 150 C | 31 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 250 V | 8.1 A | 450 mOhms | - 20 V, 20 V | 2 V | 41 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | ||||||
Not Available Online | Si | Through Hole | TO-264-3 | N-Channel | 1 Channel | 200 V | 230 A | 7.5 mOhms | - 20 V, 20 V | 5 V | 358 nC | - 55 C | + 175 C | 1.67 kW | Enhancement | HiPerFET | Tube | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | - 30 V, 30 V | 4 V | 20 nC | - 55 C | + 150 C | 78 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 30 V | 12 A | 20 mOhms | - 20 V, 20 V | 1 V | 20 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET, PowerPAK | Reel | SIA432DJ-GE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 14 A | 11 mOhms | - 25 V, 25 V | 1 V | 28 nC | - 55 C | + 150 C | 3.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS406DN-GE3 | ||||
Mfr: SIA430DJT-T1-GE3 TTI: SIA430DJT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 20V Vgs Thin PowerPAK SC-70 | 0In Stock | Si | SMD/SMT | SC-70-6 | N-Channel | 1 Channel | 20 V | 12 A | 13.5 mOhms | - 20 V, 20 V | 1 V | 18 nC | - 55 C | + 150 C | 19.2 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 1.7 kV | 2 A | 6.5 Ohms | - 20 V, 20 V | 4.5 V | 110 nC | - 55 C | + 150 C | 568 W | Enhancement | Tube | ||||||
Mfr: IRFBE30STRLPBF TTI: IRFBE30STRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs 800V 4.1A 125W | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 800 V | 4.1 A | 3 Ohms | - 20 V, 20 V | 4 V | 78 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
Mfr: SI4128DY-T1-E3 TTI: SI4128DY-T1-E3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs SO-8 | 0In Stock | Si | SMD/SMT | SOIC-8 | N-Channel | 1 Channel | 30 V | 10.9 A | 24 mOhms | - 20 V, 20 V | 1 V | 12 nC | - 55 C | + 150 C | 5 W | Enhancement | TrenchFET | Reel | SI4128DY-E3 | |||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 15 A | 480 mOhms | - 20 V, 20 V | 2.5 V | 123 nC | - 55 C | + 150 C | 300 W | Enhancement | Tube |
Added To Cart
- Mfr:{{cartPopObject.addedToCartObject.mfrPartNumber}}
- TTI:{{cartPopObject.addedToCartObject.ttiPartNumber}}
- {{cartPopObject.addedToCartObject.manufacturer}}
- Ext. Price:{{cartPopObject.addedToCartObject.extendedPrice}}
- {{cartPopObject.addedToCartObject.quantity}} @{{cartPopObject.addedToCartObject.price}}
- {{cartPopObject.addedToCartObject.numberOfReels}} reels of {{cartPopObject.addedToCartObject.partsPerReel}} @{{cartPopObject.addedToCartObject.price}}
- + $7.00 Per Reel