MicroFoot - Vishay - MOSFETs
31 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Mfr: SI8802DB-T2-E1 TTI: SI8802DB-T2-E1 Vishay / Siliconix Availability: 0In Stock108,000 On Order Expected 23-Jul-26 MOSFETs 8V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock108,000 On Order Expected 23-Jul-26 | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 3.5 A | 54 mOhms | - 5 V, 5 V | 350 mV | 4.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8823EDB-T2-E1 TTI: SI8823EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.7 A | 77 mOhms | - 8 V, 8 V | 800 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SI8406DB-T2-E1 TTI: SI8406DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 20 V | 16 A | 33 mOhms | - 8 V, 8 V | 400 mV | 20 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8851EDB-T2-E1 TTI: SI8851EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICROFOOT | 0In Stock | Si | SMD/SMT | MicroFoot-30 | P-Channel | 1 Channel | 20 V | 16.7 A | 6 mOhms | - 8 V, 8 V | 1 V | 180 nC | - 55 C | + 150 C | 3.1 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8800EDB-T2-E1 TTI: SI8800EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.8 A | 80 mOhms | - 8 V, 8 V | 400 mV | 8.3 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8819EDB-T2-E1 TTI: SI8819EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 12 V | 2.9 A | 80 mOhms | - 8 V, 8 V | 900 mV | 7 nC | - 55 C | + 150 C | 900 mW | Enhancement | Reel | |||||
Mfr: SI8489EDB-T2-E1 TTI: SI8489EDB-T2-E1 Vishay Semiconductors MOSFETs -20V Vds 12V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 5.4 A | 36 mOhms | - 12 V, 12 V | 1.2 V | 27 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8816EDB-T2-E1 TTI: SI8816EDB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.3 A | 109 mOhms | - 12 V, 12 V | 600 mV | 8 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8499DB-T2-E1 TTI: SI8499DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 20 V | 16 A | 26 mOhms | - 12 V, 12 V | 1.3 V | 30 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8824EDB-T2-E1 TTI: SI8824EDB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 20V Vds 5V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.9 A | 60 mOhms | - 5 V, 5 V | 350 mV | 6 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8806DB-T2-E1 TTI: SI8806DB-T2-E1 Vishay / Siliconix Availability: 0In StockMOSFETs 12V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 12 V | 3.9 A | 47 mOhms | - 8 V, 8 V | 400 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8497DB-T2-E1 TTI: SI8497DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 30 V | 13 A | 43 mOhms | - 12 V, 12 V | 1.1 V | 49 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8466EDB-T2-E1 TTI: SI8466EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 8 V | 5.4 A | 43 mOhms | - 5 V, 5 V | 350 mV | 13 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8812DB-T2-E1 TTI: SI8812DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 3.2 A | 60 mOhms | - 8 V, 8 V | 400 mV | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8416DB-T2-E1 TTI: SI8416DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 8V Vds 5V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | N-Channel | 1 Channel | 8 V | 16 A | 23 mOhms | - 5 V, 5 V | 800 mV | 17 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8810EDB-T2-E1 TTI: SI8810EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 2.9 A | 72 mOhms | - 8 V, 8 V | 400 mV | 8 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8817DB-T2-E1 TTI: SI8817DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 2.9 A | 61 mOhms | - 8 V, 8 V | 1 V | 19 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8425DB-T1-E1 TTI: SI8425DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 20 V | 9.3 A | 40 mOhms | - 10 V, 10 V | 900 mV | 110 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8409DB-T1-E1 TTI: SI8409DB-T1-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 6.3 A | 65 mOhms | - 12 V, 12 V | 1.4 V | 26 nC | - 55 C | + 150 C | 2.77 W | Enhancement | TrenchFET | Reel | SI8409DB-E1 | |||
Mfr: SI8808DB-T2-E1 TTI: SI8808DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 30 V | 2.5 A | 95 mOhms | - 8 V, 8 V | 400 mV | 10 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8472DB-T2-E1 TTI: SI8472DB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs 20V Vds 8V Vgs MICRO FOOT 1 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | N-Channel | 1 Channel | 20 V | 4.5 A | 44 mOhms | - 8 V, 8 V | 400 mV | 18 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 20 V | 5.7 A | 37 mOhms | - 8 V, 8 V | 850 mV | 10.4 nC | - 55 C | + 150 C | 1.8 W | Enhancement | TrenchFET | Reel | ||||||
Mfr: SI8821EDB-T2-E1 TTI: SI8821EDB-T2-E1 Vishay Semiconductors Availability: 0In StockMOSFETs -30V Vds 12V Vgs MICRO FOOT 0.8 x 0.8 | 0In Stock | Si | SMD/SMT | MicroFoot-4 | P-Channel | 1 Channel | 30 V | 2.3 A | 105 mOhms | - 12 V, 12 V | 1.3 V | 17 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel | ||||
Mfr: SI8483DB-T2-E1 TTI: SI8483DB-T2-E1 Vishay Semiconductors MOSFETs -12V Vds 10V Vgs MICRO FOOT 1.5 x 1 | 0In Stock | Si | SMD/SMT | MicroFoot-6 | P-Channel | 1 Channel | 12 V | 16 A | 22 mOhms | - 10 V, 10 V | 800 mV | 65 nC | - 55 C | + 150 C | 13 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | MicroFoot-0.8x0.8-4 | N-Channel | 1 Channel | 30 V | 2.2 A | 128 mOhms | - 12 V, 12 V | 1 V | 4.6 nC | - 55 C | + 150 C | 900 mW | Enhancement | TrenchFET | Reel |
- 1
- 2