Vishay - MOSFETs
8,352 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SI7172DP-T1-GE3 TTI: SI7172DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 200V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 200 V | 25 A | 70 mOhms | 20 V | 4 V | 51 nC | - 55 C | + 150 C | 96 W | Enhancement | TrenchFET | Reel | SI7172DP-GE3 | |||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 12 V | 1.3 A | 390 mOhms | 8 V | 2.5 V | 4.2 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1965DH-T1-BE3 SI1905DL-T1-GE3 SI1917EDH-T1-GE3 | ||||
Mfr: SI2324DS-T1-GE3 TTI: SI2324DS-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SOT-23 | 0In Stock | Si | SMD/SMT | SOT-23-3 | N-Channel | 1 Channel | 100 V | 2.3 A | 234 mOhms | 20 V | 1.2 V | 10.4 nC | - 55 C | + 150 C | 2.5 W | Enhancement | TrenchFET | Reel | SI2324DS-T1-BE3 | |||
Mfr: IRFR9220TRPBF TTI: IRFR9220TRPBF Vishay Semiconductors Availability: 0In StockMOSFETs 200V P-CH HEXFET MOSFET D | 0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | P-Channel | 1 Channel | 200 V | 3.6 A | 1.5 Ohms | 20 V | 4 V | 20 nC | - 55 C | + 150 C | 42 W | Enhancement | Reel | IRFR9220TRPBF-BE3 | ||||
0In Stock | Si | SMD/SMT | TO-263-3 | P-Channel | 1 Channel | 100 V | 19 A | 200 mOhms | 20 V | 2 V | 61 nC | - 55 C | + 175 C | 150 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 50 A | 28 mOhms | 20 V | 2 V | 67 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 250 V | 38 A | 75 mOhms | 20 V | 2 V | 210 nC | - 55 C | + 150 C | 280 W | Enhancement | Reel | ||||||
Mfr: SI3443DDV-T1-GE3 TTI: SI3443DDV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 4 A | 90 mOhms | 12 V | 1.5 V | 9 nC | - 55 C | + 150 C | 2.7 W | Enhancement | TrenchFET | Reel | SI3443DDV-T1-BE3 | |||
0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 150 V | 1.4 A | 750 mOhms | 20 V | 4 V | 8 nC | - 55 C | + 150 C | 3.2 W | Enhancement | TrenchFET | Reel | SI3437DV-T1-BE3 SI3437DV-GE3 | ||||
Mfr: SISS40DN-T1-GE3 TTI: SISS40DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8S-8 | N-Channel | 1 Channel | 100 V | 36.5 A | 21 mOhms | 20 V | 2.3 V | 24 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | SOT-363-6 | P-Channel | 2 Channel | 20 V | 1.3 A | 490 mOhms | 8 V | 2.5 V | 4 nC | - 55 C | + 150 C | 1.25 W | Enhancement | TrenchFET | Reel | SI1967DH-T1-BE3 SI1903DL-T1-GE3 | ||||
Mfr: SIS468DN-T1-GE3 TTI: SIS468DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 80V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 30 A | 19.5 mOhms | 20 V | 1.5 V | 28 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIS468DN-GE3 | |||
Mfr: SI3407DV-T1-GE3 TTI: SI3407DV-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -20V Vds 12V Vgs TSOP-6 | 0In Stock | Si | SMD/SMT | TSOP-6 | P-Channel | 1 Channel | 20 V | 8 A | 32.7 mOhms | 12 V | 1.5 V | 21 nC | - 55 C | + 150 C | 4.2 W | Enhancement | TrenchFET | Reel | SI3407DV-T1-BE3 SI3407DV-GE3 | |||
Mfr: SI7611DN-T1-GE3 TTI: SI7611DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -40V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 40 V | 18 A | 25 mOhms | 20 V | 1 V | 41 nC | - 50 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | SI7611DN-GE3 | |||
Mfr: SIS402DN-T1-GE3 TTI: SIS402DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 30 V | 35 A | 6 mOhms | 20 V | 1.15 V | 42 nC | - 55 C | + 150 C | 52 W | Enhancement | TrenchFET, PowerPAK | Reel | SIJ484DP-T1-GE3 | |||
Mfr: SUM50010E-GE3 TTI: SUM50010E-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 60V Vds; 20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 60 V | 150 A | 1.75 mOhms | 20 V | 2 V | 212 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | |||||
Mfr: SIA477EDJT-T1-GE3 TTI: SIA477EDJT-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -12V Vds 8V Vgs PowerPAK SC-70-6L | 0In Stock | Si | SMD/SMT | PowerPAK-SC70-6 | P-Channel | 1 Channel | 12 V | 12 A | 11 mOhms | 8 V | 1 V | 83 nC | - 55 C | + 150 C | 19 W | Enhancement | TrenchFET | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 40 V | 20.5 A | 6.6 mOhms | 20 V | 1.2 V | 48 nC | - 55 C | + 150 C | 34.7 W | Enhancement | TrenchFET, PowerPAK | Reel | SIR422DP-GE3 | ||||
Mfr: SIHF7N60E-E3 TTI: SIHF7N60E-E3 Vishay / Siliconix Availability: 0In StockMOSFETs 600V Vds 30V Vgs TO-220 FULLPAK | 0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 7 A | 600 mOhms | 30 V | 4 V | 20 nC | - 55 C | + 150 C | 31 W | Enhancement | Tube | SIHF7N60E | ||||
Mfr: SI7315DN-T1-GE3 TTI: SI7315DN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs -150V Vds 30V Vgs PowerPAK 1212-8 | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | P-Channel | 1 Channel | 150 V | 8.9 A | 315 mOhms | 30 V | 4 V | 19.5 nC | - 50 C | + 150 C | 52 W | Enhancement | TrenchFET | Reel | ||||
Mfr: IRFBC40ASTRLPBF TTI: IRFBC40ASTRLPBF Vishay Semiconductors Availability: 0In StockMOSFETs N-Chan 600V 6.2 Amp | 0In Stock | Si | SMD/SMT | TO-263-3 | N-Channel | 1 Channel | 600 V | 6.2 A | 1.2 Ohms | 30 V | 2 V | 42 nC | - 55 C | + 150 C | 125 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 500 V | 20 A | 270 mOhms | 20 V | 2 V | 120 nC | - 55 C | + 150 C | 280 W | Enhancement | Tube | ||||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 60 V | 21.4 A | 31 mOhms | 20 V | 1 V | 11 nC | - 55 C | + 150 C | 31.25 W | Enhancement | TrenchFET | Reel | SUD23N06-31-BE3 | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 40 V | 100 A | 3.6 mOhms | 20 V | 2.3 V | 220 nC | - 55 C | + 150 C | 104 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 33 A | 6 mOhms | - 16 V, 20 V | 1.2 V | 21.5 nC | - 55 C | + 150 C | 14.7 W | Enhancement | TrenchFET, PowerPAK | Reel |