Vishay - MOSFETs
8,394 ResultsPart | Availability | Purchasing | RoHS/Lead | Technology | Mounting Style | Package / Case | Transistor Polarity | Number of Channels | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs - Gate-Source Voltage | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Minimum Operating Temperature | Maximum Operating Temperature | Pd - Power Dissipation | Channel Mode | Qualification | Tradename | Packaging | Part # Aliases |
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Mfr: SIHB105N60EF-GE3 TTI: SIHB105N60EF-GE3 Vishay / Siliconix MOSFETs EF Series Pwr MOSFET w/Fast Body Diode | 0In Stock | Si | SMD/SMT | N-Channel | 1 Channel | 600 V | 29 A | 102 mOhms | 30 V | 5 V | 35 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
Mfr: IRFL9014TRPBF-BE3 TTI: IRFL9014TRPBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs SOT223 PCHA N60V | 0In Stock | Si | SMD/SMT | SOT-223-4 | P-Channel | 1 Channel | 60 V | 1.8 A | 500 mOhms | 20 V | 4 V | 12 nC | - 55 C | + 150 C | 3.1 W | Enhancement | Reel | IRFL9014TRPBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 500 V | 2.5 A | 3 Ohms | 20 V | 4 V | 24 nC | - 55 C | + 150 C | 50 W | Enhancement | Reel | IRF820PBF | |||||
Mfr: IRF9Z30PBF-BE3 TTI: IRF9Z30PBF-BE3 Vishay / Siliconix Availability: 0In StockMOSFETs TO220 P CHAN 60V | 0In Stock | Si | Through Hole | TO-220-3 | P-Channel | 1 Channel | 50 V | 18 A | 140 mOhms | 20 V | 4 V | 39 nC | - 55 C | + 150 C | 74 W | Enhancement | Reel | IRF9Z30PBF | ||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 1 kV | 1.4 A | 11 Ohms | 20 V | 4 V | 38 nC | - 55 C | + 150 C | 54 W | Enhancement | Reel | IRFBG20PBF | |||||
0In Stock | Si | SMD/SMT | DPAK-3 (TO-252-3) | N-Channel | 1 Channel | 100 V | 4.3 A | 540 mOhms | 20 V | 4 V | 8.3 nC | - 55 C | + 150 C | 2.5 W | Enhancement | Reel | IRFR110PBF | |||||
0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 100 V | 24.7 A | 25.5 mOhms | 20 V | 2.5 V | 19.2 nC | - 55 C | + 150 C | 39 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHG24N80AE-GE3 TTI: SIHG24N80AE-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs N-CHANNEL 800V E Series Pwr MOSFET | 0In Stock | Si | Through Hole | TO-247AC-3 | N-Channel | 1 Channel | 800 V | 21 A | 184 mOhms | 30 V | 4 V | 59 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | PowerPAK SO-8-8 | N-Channel | 1 Channel | 80 V | 146 A | 3.2 mOhms | 20 V | 4 V | 76 nC | - 55 C | + 150 C | 104 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SIHB5N80AE-GE3 TTI: SIHB5N80AE-GE3 Vishay Availability: 0In StockMOSFETs TO263 800V 4.4A N-CH MOSFET | 0In Stock | Si | Reel | |||||||||||||||||||
0In Stock | Si | SMD/SMT | PowerPak-9 | N-Channel | 1 Channel | 600 V | 48 A | 49 mOhms | 30 V | 5 V | 65 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel | ||||||
Mfr: SI1480DH-T1-GE3 TTI: SI1480DH-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 100V Vds 20V Vgs SC70-6 | 0In Stock | Si | SMD/SMT | SOT-363-6 | N-Channel | 1 Channel | 100 V | 2.6 A | 200 mOhms | 20 V | 3 V | 5 nC | - 55 C | + 150 C | 2.8 W | Enhancement | TrenchFET | Reel | SI1480DH-T1-BE3 | |||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 150 V | 29 A | 28.5 mOhms | 20 V | 2 V | 21 nC | - 55 C | + 150 C | 69.5 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | P-Channel | 1 Channel | 100 V | 120 A | 10.1 mOhms | 20 V | 2.5 V | 125 nC | - 55 C | + 175 C | 375 W | Enhancement | Reel | ||||||
0In Stock | Si | Through Hole | TO-247-3 | N-Channel | 1 Channel | 600 V | 60 A | 35.5 mOhms | 20 V | 2 V | 410 nC | - 55 C | + 150 C | 417 W | Enhancement | Reel | ||||||
Mfr: SIRC18DP-T1-GE3 TTI: SIRC18DP-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs 30V Vds 20V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 850 uOhms | - 16 V, 20 V | 1 V | 111 nC | - 55 C | + 150 C | 54.3 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 30 V | 60 A | 4.3 mOhms | - 16 V, 20 V | 1.2 V | 21 nC | - 55 C | + 150 C | 38 W | Enhancement | TrenchFET, PowerPAK | Reel | |||||
Mfr: SIR167DP-T1-GE3 TTI: SIR167DP-T1-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs -30V Vds 25V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | P-Channel | 1 Channel | 30 V | 60 A | 4.6 mOhms | 25 V | 2.5 V | 74 nC | - 55 C | + 150 C | 65.8 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SIR800ADP-T1-RE3 TTI: SIR800ADP-T1-RE3 Vishay Semiconductors MOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8 | 0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 20 V | 177 A | 1.35 mOhms | - 8 V, 12 V | 600 mV | 53 nC | - 55 C | + 150 C | 62.5 W | Enhancement | TrenchFET, PowerPAK | Reel | ||||
Mfr: SUM40012EL-GE3 TTI: SUM40012EL-GE3 Vishay / Siliconix Availability: 0In StockMOSFETs 40V Vds +/-20V Vgs TO-263 | 0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 40 V | 150 A | 1.67 mOhms | 20 V | 1 V | 195 nC | - 55 C | + 175 C | 150 W | Enhancement | Reel | |||||
0In Stock | Si | Through Hole | TO-220-3 | N-Channel | 1 Channel | 600 V | 30 A | 100 mOhms | 30 V | 3 V | 50 nC | - 55 C | + 150 C | 208 W | Enhancement | Reel | ||||||
0In Stock | Si | SMD/SMT | PowerPAK-SO-8 | N-Channel | 1 Channel | 100 V | 65.8 A | 8 mOhms | 20 V | 4 V | 26.5 nC, 34.5 nC | - 55 C | + 150 C | 83.3 W | Enhancement | TrenchFET | Reel | |||||
Mfr: SISS32LDN-T1-GE3 TTI: SISS32LDN-T1-GE3 Vishay Semiconductors Availability: 0In StockMOSFETs N-CHANNEL 80V PowerPAK 1212-8S | 0In Stock | Si | SMD/SMT | PowerPAK-1212-8 | N-Channel | 1 Channel | 80 V | 63 A | 7.2 mOhms | 20 V | 2.5 V | 17.7 nC, 37.5 nC | - 55 C | + 150 C | 65.7 W | Enhancement | TrenchFET | Reel | ||||
Mfr: SIZF5302DT-T1-RE3 TTI: SIZF5302DT-T1-RE3 Vishay Semiconductors Availability: 0In StockMOSFETs PWRPR N CHAN 30V | 0In Stock | Si | SMD/SMT | PowerPAIR 3 x 3FS-12 | N-Channel | 2 Channel | 30 V | 100 A | 3.2 mOhms | - 12 V, 16 V | 2 V | 6.7 nC | - 55 C | + 150 C | 48.1 W | Enhancement | Reel | |||||
0In Stock | Si | SMD/SMT | D2PAK-3 (TO-263-3) | N-Channel | 1 Channel | 600 V | 33 A | 99 mOhms | 30 V | 4 V | 100 nC | - 55 C | + 150 C | 278 W | Enhancement | Reel |